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The future of ferroelectric field-effect transistor technology
Nature Electronics, 2020The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. A ferroelectric field-effect transistor combines a ferroelectric material with a semiconductor in a transistor ...
Asif Islam Khan +2 more
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Steep Slope Ferroelectric Field Effect Transistor
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of ...
Jorge Gomez +4 more
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Simulation Model of a Ferroelectric Field Effect Transistor
Integrated Ferroelectrics, 2002An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design.
Todd C. Macleod, Fat Duen Ho
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Organic field effect transistors with ferroelectric hysteresis
Thin Solid Films, 2007Abstract The ferroelectric copolymer Poly(vinylidene fluoride trifluoroethylene) is used as insulating material for capacitor structures and organic field effect transistors. For capacitors, we find the typical hysteresis in the capacitance–voltage characteristic upon increasing the voltage scan window. A writing process with adequate electric fields
Klaus Müller +3 more
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(Invited) A Ferroelectric Semiconductor Field-Effect Transistor
ECS Meeting Abstracts, 2019A ferroelectric semiconductor field-effect transistor (FeS-FET) is proposed and experimentally demonstrated. In this novel FeS-FET, a 2D ferroelectric semiconductor α-In2Se3 is used to replace conventional semiconductor as channel. α-In2Se3 is identified due to its proper bandgap, room temperature ferroelectricity, the ability to maintain ...
Mengwei Si, Peide D Ye
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Memory modes of ferroelectric field effect transistors
Solid-State Electronics, 1977Abstract Effects of traps on the memory characteristics of ferroelectric field effect transistors with the metat-ferroelectric-insulator-semiconductor structure were theoretically analyzed. Various modes of operation, i.e. the polarization-limited mode, trap-limited mode, critical field-limited mode, MNOS mode and probability-limited mode, were ...
Kentaro Ito, Hidetoshi Tsuchiya
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The Quantum Metal Ferroelectric Field-Effect Transistor
IEEE Transactions on Electron Devices, 2014It has recently been suggested that ferroelectric (FE) negative capacitance effects can be used to achieve steep subthreshold slope field-effect transistors, which are greatly desired for reducing energy consumption in modern digital electronics. Here, we propose that this concept can be improved by the introduction of a very thin metal or metal-like ...
David J. Frank +5 more
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Polymorphism of Hafnia-Based Ferroelectrics for Ferroelectric Field-Effect Transistors
2020In this chapter, the thermodynamic and kinetic origins of the unexpected ferroelectric phase formation in emerging fluorite-structure oxides such as HfO2 and ZrO2 are discussed. Various thermodynamic factors, such as doping, stress, and surface/interface/grain boundary energies, could affect the relative free energies of crystalline phases.
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Cryogenic Characteristics of Ferroelectric Capacitors and Ferroelectric Field-Effect Transistors
ECS Meeting AbstractsFerroelectricity exhibits two stable states with permanent polarizations, making it promising for nonvolatile memory applications. Compared to conventional perovskite ferroelectrics, hafnium-based ferroelectric materials, such as Hf0.5Zr0.5O2 (HZO), attracts much attention due to their compatibility with CMOS technology [1].
Yi Tzu Wang +2 more
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The Ferroelectric Field Effect Transistor Simulation and Analysis
Advanced Materials Research, 2013A ferroelectric field effect transistor (FFET) with the metal/ferroelectric/ semiconductor (MFS) structure is designed and simulated. The simulation results show that the drain current at Vg=0 after polarized is decided by Pr and Pr/Ps. When increasing Pr, Id enhanced. When Pr/Ps decreases, Idincreases if the FFET is saturated. When a voltage (Vp=1.5v)
Qiang Wang +3 more
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