Results 211 to 220 of about 2,381 (268)

Back-Gated WS₂-Enhanced Barium Titanate Phototransistor with Polarization-Controlled UV Responsivity and Enhanced Thermal Stability. [PDF]

ACS Appl Mater Interfaces
Padhi RR, Das C, Feng GH.
europepmc   +1 more source

Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution. [PDF]

Nanomicro Lett
Lee JH, Kim JY, Lee HJ, Choi SJ, Lee YJ, Jang HW.   +5 more
europepmc   +1 more source

Intercalation-Induced Phase Transitions in Ferroelectric α-In₂Se₃. [PDF]

Adv Sci (Weinh)
He X, Gong Z, Wang T, Wang B, Liu C, Wang D, Ma Y, Feng P, Zhang C, Hu W, Liu K, Wang H, Zhang X.   +12 more
europepmc   +1 more source

Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]

Nanoscale Adv
Song I, Kim J, Lee S, Myeong I.
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Gate dielectric stack design for 2D materials-based electronics. [PDF]

Nano Converg
Jin M, Kim H, Lee S, Han S, Moon JY, Kim S, Kim K, Kim G, Seo G, Hwang Y, Lee J, Bae S, Xu Z, Kim JS, Yoon SG, Mun J, Lee JH, Choi MS, Bae SH.   +18 more
europepmc   +1 more source

Reconfigurable Neuron and Synapse Operations in a Steep-Switching Nonvolatile Transistor. [PDF]

Small
Noh J, Kim YK, Kang S, Lee SM, Jang BC, Lee S.   +5 more
europepmc   +1 more source

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor.

Sci Rep, 2016
Park JH, Kim HY, Jang GS, Seok KH, Chae HJ, Lee SK, Kiaee Z, Joo SK.   +7 more
europepmc   +1 more source

Ferroelectricity-functionalized organic field-effect transistors

, 2006
openaire   +1 more source

Low-force pulse switching of ferroelectric polarization enabled by imprint field. [PDF]

Nat Commun
Zhang Y, Du S, Liu X, Yuan Y, Jing Y, Tian T, Chu J, Xue F, Chang K, Sun J.   +9 more
europepmc   +1 more source

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Cryogenic characterization of a ferroelectric field-effect-transistor

Applied Physics Letters, 2020
A ferroelectric field-effect transistor (FeFET) with scaled dimensions (170 nm and 24 nm of gate width and length, respectively) and a 10 nm thick Si doped HfO2 ferroelectric in the gate oxide stack are characterized at cryogenic temperatures down to 6.9 K.
Zheng Wang, Hanbin Ying, Winston Chern   +2 more
exaly   +2 more sources