Ferroelectric field-effect transistor

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Cryogenic Characteristics of Ferroelectric Capacitors and Ferroelectric Field-Effect Transistors

ECS Meeting Abstracts
Ferroelectricity exhibits two stable states with permanent polarizations, making it promising for nonvolatile memory applications. Compared to conventional perovskite ferroelectrics, hafnium-based ferroelectric materials, such as Hf0.5Zr0.5O2 (HZO), attracts much attention due to their compatibility with CMOS technology [1].
Yi Tzu Wang, Hsiang-Shun Kao, Jiun-Yun Li +2 more
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Steep Slope Ferroelectric Field Effect Transistor

2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019
In this work, we present an analysis of the switching dynamics of ferroelectrics that provides a critical insight into the steep slope exhibited by Ferroelectric Field Effect Transistor (FeFET). We show that, steep slope is fundamentally related to two competing mechanisms-the polarization switching dynamics in the ferroelectric and the time delay of ...
Jorge Gomez +4 more
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(Invited) A Ferroelectric Semiconductor Field-Effect Transistor

ECS Meeting Abstracts, 2019
A ferroelectric semiconductor field-effect transistor (FeS-FET) is proposed and experimentally demonstrated. In this novel FeS-FET, a 2D ferroelectric semiconductor α-In2Se3 is used to replace conventional semiconductor as channel. α-In2Se3 is identified due to its proper bandgap, room temperature ferroelectricity, the ability to maintain ...
Mengwei Si, Peide D Ye
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Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing

ACS Nano, 2023
Juanxia Wu, Hongwei Zhu
exaly

Ferroelectric Field Effect Transistor

2019
Johannes Mueller, Stefan Slesazeck, Thomas Mikolajick +2 more
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Ferroelectric field effect transistor