Results 31 to 40 of about 19,286 (256)

Sensitivity of Field-Effect Transistor-Based Terahertz Detectors

open access: yesSensors, 2021
This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors. We point out that the reported result may
Elham Javadi   +5 more
doaj   +1 more source

A Micro-Machined Microphone Based on a Combination of Electret and Field-Effect Transistor

open access: yesSensors, 2015
Capacitive-type transduction is now widely used in MEMS microphones. However, its sensitivity decreases with reducing size, due to decreasing air gap capacitance.
Kumjae Shin   +3 more
doaj   +1 more source

Applications of Transistor-Based Biochemical Sensors

open access: yesBiosensors, 2023
Transistor-based biochemical sensors feature easy integration with electronic circuits and non-invasive real-time detection. They have been widely used in intelligent wearable devices, electronic skins, and biological analyses and have shown broad ...
Qiya Gao, Jie Fu, Shuang Li, Dong Ming
doaj   +1 more source

The ferroelectric field-effect transistor with negative capacitance

open access: yesnpj Computational Materials, 2022
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
I. Luk’yanchuk   +4 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Multilayer MoS2 Schottky Barrier Field Effect Transistor

open access: yesIEEE Open Journal of Nanotechnology
The miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB ...
Sebastiano De Stefano   +7 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor

open access: yesMicromachines, 2022
A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
doaj   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

High Ion/Ioff current ratio graphene field effect transistor: the role of line defect

open access: yesBeilstein Journal of Nanotechnology, 2015
The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect
Mohammad Hadi Tajarrod   +1 more
doaj   +1 more source

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