Results 1 to 10 of about 11,359 (209)
Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies [PDF]
, 2005 CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures.
Annema, Anne-Johan, Nauta, Bram
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Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
East European Journal of PhysicsThe self-heating effect on the fin field effect transistor (FinFET) is investigated. The dependence of the lattice temperature in the channel center of the transistor on the thickness of the gate oxide, as well as the back oxide, is simulated.
M.M. Khalilloev +3 more
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Thermionic Emission as a tool to study transport in undoped nFinFETs
, 2010 Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined.
Biesemans, Serge +8 more
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A Cross-Layer Framework for Designing and Optimizing Deeply-Scaled FinFET-Based Cache Memories
Journal of Low Power Electronics and Applications, 2015 This paper presents a cross-layer framework in order to design and optimize energy-efficient cache memories made of deeply-scaled FinFET devices. The proposed design framework spans device, circuit and architecture levels and considers both super- and ...
Alireza Shafaei +3 more
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Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
Applied Sciences, 2020 The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim +9 more
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General Geometric Fluctuation Modeling for Device Variability Analysis
, 2015 The authors propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations.
Choi, Woosung +4 more
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Diamond FinFET without Hydrogen Termination [PDF]
Scientific Reports, 2018 AbstractIn this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction.
Biqin Huang +3 more
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Crystals, 2023 In this study, we developed a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2. We investigated the impact of the hysteresis effect on device characteristics of various fin-widths and the degradation induced by stress on ...
Wen-Qi Zhang +3 more
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Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET [PDF]
IEEE Transactions on Electron Devices, 2013 We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to-band tunneling (BTBT) leakage-induced bipolar effect is found to result in an amplified BTBT leakage for GeOI FinFET.
Vita Pi-Ho Hu +3 more
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FinFETs: From Devices to Architectures [PDF]
Advances in Electronics, 2014 Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to the presence of multiple (two/three) gates, FinFETs/Trigate FETs are able to tackle short-channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology ...
Debajit Bhattacharya, Niraj K. Jha
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