Results 91 to 100 of about 11,328 (210)
HFinFET: A Scalable, High Performance, Low Leakage Hybrid N-Channel FET
, 2010 In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control.
Bhat, Navakanta +3 more
core +1 more source
One Dimensional Metal Oxide Semiconductor Nanotransistors
Advanced Materials Technologies, Volume 10, Issue 21, November 6, 2025.This review assesses one dimensional metal oxide NW‐FETs as promising alternatives to conventional transistors. It explores how advances in architecture, material composition, and fabrication processes expand device capabilities. Emphasis is placed on novel gate configurations, different metal oxide nanowires, and post‐treatment methods, which ...
Mariana D. Cortinhal +2 more
wiley +1 more source
Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors
Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.We demonstrate a U‐shape ambipolar Schottky barrier field‐effect transistor fabricated on silicon‐on‐insulator substrate. The geometry naturally enables gate‐all‐around operation and long channel lengths within a compact footprint, while simplifying self‐aligned contact formation compared to conventional 3D architectures. The current device is realized
Cigdem Cakirlar +9 more
wiley +1 more source
Pushing Biomolecule Detection Limit With Graphene Field‐effect Transistor Biosensors
Advanced Electronic Materials, Volume 11, Issue 19, November 18, 2025.Graphene knows your health! This work presents a comprehensive overview of recent advances in graphene field‐effect transistor (GFET) biosensors for ultrasensitive biomolecule detection. How device engineering, high‐mobility graphene synthesis, and tailored surface chemistry push detection limits is highlighted, while discussing emerging strategies ...
Co Dang Pham +4 more
wiley +1 more source
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
East European Journal of PhysicsIn this work, the influence of the local oxide trapped charge on the transfer Id-Vg characteristics and capacitance of the gatetoI. INTRODUCTION source (drain) connection of the silicon-on-insulator (SOI) structure-based FinFET is simulated.
Atabek Atamuratov +5 more
doaj +1 more source
Ultra Low Power High Speed Domino Logic Circuit by Using FinFET Technology
Advances in Electrical and Electronic Engineering, 2016 Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultra deep sub-micron (UDSM) technology. To overcome from this situation double gate device like FinFET is used which has excellent control over the thin ...
Ajay Kumar Dadoria +3 more
doaj +1 more source
Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
, 2016 We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach.
Bastard G. +9 more
core +3 more sources
Фізика і хімія твердого тілаРозвиток сучасної електроніки ґрунтується на впровадженні сучасних мікро- та наноелектронних технологій. Традиційні комплементарні метал-оксид-напівпровідникові (КМОН) планарні транзисторні структури на основі масивного кремнію поступово поступаються ...
I. Kohut, O. Samarchuk
doaj +1 more source
The Effect of Fin Structure in 5 nm FinFET Technology
Journal of Microelectronic Manufacturing, 2019 In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin
Enming Shang +4 more
doaj +1 more source
Benchmarking the screen-grid field effect transistor (SGrFET) for digital applications
, 2010 Continuous scaling of CMOS technology has now reached a state of evolution, therefore, novel device structures and new materials have been proposed for this purpose.
Shadrokh, Yasaman, Shadrokh, Yasaman
core +1 more source