Results 91 to 100 of about 11,359 (209)
Multi-port Memory Design for Advanced Computer Architectures [PDF]
, 2013 In this thesis, we describe and evaluate novel memory designs for multi-port on-chip and off-chip use in advanced computer architectures. We focus on combining multi-porting and evaluating the performance over a range of design parameters.
Zhao, Yirong
core
Kolmogorov–Arnold Network for Transistor Compact Modeling
Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.This work introduces Kolmogorov–Arnold network (KAN) for the transistor—an architecture that integrates interpretability with high precision in physics‐based function modeling. The results reveal that despite achieving superior prediction accuracy for critical figures of merit, KAN demonstrates unique inherent challenges for transistor modeling ...
Rodion Novkin, Hussam Amrouch
wiley +1 more source
Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction
Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo +3 more
wiley +1 more source
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
East European Journal of PhysicsIn this work, the influence of the local oxide trapped charge on the transfer Id-Vg characteristics and capacitance of the gatetoI. INTRODUCTION source (drain) connection of the silicon-on-insulator (SOI) structure-based FinFET is simulated.
Atabek Atamuratov +5 more
doaj +1 more source
BDD-Based Topology Optimization for Low-Power DTIG FinFET Circuits
Active and Passive Electronic Components, 2019 This paper proposed a logic synthesis method based on binary decision diagram (BDD) representation. The proposed method is optimized for dual-threshold independent-gate (DTIG) FinFET circuits.
Haiyan Ni +3 more
doaj +1 more source
Фізика і хімія твердого тілаРозвиток сучасної електроніки ґрунтується на впровадженні сучасних мікро- та наноелектронних технологій. Традиційні комплементарні метал-оксид-напівпровідникові (КМОН) планарні транзисторні структури на основі масивного кремнію поступово поступаються ...
I. Kohut, O. Samarchuk
doaj +1 more source
Ultra Low Power High Speed Domino Logic Circuit by Using FinFET Technology
Advances in Electrical and Electronic Engineering, 2016 Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultra deep sub-micron (UDSM) technology. To overcome from this situation double gate device like FinFET is used which has excellent control over the thin ...
Ajay Kumar Dadoria +3 more
doaj +1 more source
The Effect of Fin Structure in 5 nm FinFET Technology
Journal of Microelectronic Manufacturing, 2019 In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin
Enming Shang +4 more
doaj +1 more source
Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
, 2016 We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach.
Bastard G. +9 more
core +3 more sources
Tunable Kondo effect in a single donor atom
, 2009 The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned
Borda L. +26 more
core +1 more source