Comprehensive Investigation of Truncated Fin GaN FinFET for Improved Analog/RF Performance
IEEE Open Journal of NanotechnologyThis work presents an analysis of the performance of Gallium Nitride Truncated Fin FinFETs (GaN-TF-FinFET) and compares them with conventional (C) FinFET, TF-FinFET, and silicon-on-insulator (SOI) TF-FinFET in analog and RF applications by using advanced
Praween Kumar Srivastava +2 more
doaj +1 more source
A high aspect ratio Fin-Ion Sensitive Field Effect Transistor: compromises towards better electrochemical bio-sensing [PDF]
, 2019 The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results.
García, César Pascual +4 more
core +3 more sources
Variability Analysis of Ferroelectric FinFETs for Embedded Non-Volatile Memory Applications
IEEE AccessIn this study, we conduct a comparative analysis of the process variation induced variability – specifically the random ferroelectric/dielectric phase variation, the metal work function variation, and the line edge roughness – in various ...
Byeongju Ha +3 more
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FinFET Performance Enhancement by Source/Drain Cavity Structure Optimization
Journal of Microelectronic Manufacturing, 2020 Fin field-effect transistor (FinFET) technology has been introduced to the mainstream complementary metal-oxide semiconductor (CMOS) manufacturing for low-power and high-performance applications.
Man Gu, Wenjun Li, Haiting Wang, Owen Hu
doaj +1 more source
Advanced Intelligent Systems, 2022 A capacitive neural network with a capacitive crossbar array that can replace a traditional resistive crossbar array can drastically lower static power consumption during reading operations because a capacitor consumes only dynamic power. Herein, a leaky
Joon-Kyu Han +3 more
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Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications [PDF]
, 2017 In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption.
Moll Echeto, Francisco de Borja +2 more
core +2 more sources
Nano Convergence, 2020 In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric ...
Chankeun Yoon +2 more
doaj +1 more source
hp-finite element method for simulating light scattering from complex 3D structures
, 2015 Methods for solving Maxwell's equations are integral part of optical metrology and computational lithography setups. Applications require accurate geometrical resolution, high numerical accuracy and/or low computation times.
Burger, S. +4 more
core +1 more source
Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation [PDF]
, 2008 In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE).
Giusi, G. +3 more
core +1 more source
Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities [PDF]
, 2020 The aim of this work is a discussion on the figures of merit of identified traps located in the depletion zone (Si film) of advanced MOSFET devices. Two methodologies to estimate the volume trap densities are investigated, one using the relationship ...
Claeys, Cor +5 more
core +6 more sources