Results 51 to 60 of about 11,328 (210)

Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance

Frontiers in Electronics
This paper comprehensively analyses the RF (Radio Frequency) and wireless performance characteristics of high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs-SOI-FinFET).
Priyanka Agrwal, Ajay Kumar
doaj   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Advanced Intelligent Systems, EarlyView.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee, Changha Kim, Geun Tae Park, Seung Hun Baek, Myeong Su Shin, Woo Young Choi   +5 more
wiley   +1 more source

Voltage Differencing Buffered Amplifier Realisation Using 32 nm FinFET Technology and Universal Filter Applications

Elektronika ir Elektrotechnika
This paper presents high-frequency universal filter applications based on a voltage differential buffered amplifier (VDBA) using 32 nm fin field effect transistor (FinFET) technology.
Sevda Altan Yagci, Mustafa Konal, Firat Kacar   +2 more
doaj   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, EarlyView.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source

Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

East European Journal of Physics
The self-heating effect on the fin field effect transistor (FinFET) is investigated. The dependence of the lattice temperature in the channel center of the transistor on the thickness of the gate oxide, as well as the back oxide, is simulated.
M.M. Khalilloev, B.O. Jabbarova, F. Eshchanov, A.E. Atamuratov   +3 more
doaj   +1 more source

A Cross-Layer Framework for Designing and Optimizing Deeply-Scaled FinFET-Based Cache Memories

Journal of Low Power Electronics and Applications, 2015
This paper presents a cross-layer framework in order to design and optimize energy-efficient cache memories made of deeply-scaled FinFET devices. The proposed design framework spans device, circuit and architecture levels and considers both super- and ...
Alireza Shafaei, Shuang Chen, Yanzhi Wang, Massoud Pedram   +3 more
doaj   +1 more source

Thermionic Emission as a tool to study transport in undoped nFinFETs

, 2010
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined.
Biesemans, Serge, Collaert, Nadine, Klimeck, Gerhard, Lansbergen, Gabriel P., Lee, Sunhee, Paul, Abhijeet, Rogge, Sven, Tettamanzi, Giuseppe C., Verduijn, Jan   +8 more
core   +1 more source

Random Discrete Dopant Induced Variability in Negative Capacitance Transistors [PDF]

, 2018
In this work we investigate the impact of random discrete dopants (RDD) induced statistical variability in ferroelectric negative capacitance field effect transistors (NCFETs).
Asenov, Asen, Dutta, Tapas, Georgiev, Vihar   +2 more
core   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

Applied Sciences, 2020
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, Jae Woo Lee   +9 more
doaj   +1 more source