Results 61 to 70 of about 11,328 (210)
General Geometric Fluctuation Modeling for Device Variability Analysis
, 2015 The authors propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations.
Choi, Woosung +4 more
core +1 more source
Carrier Mapping in Sub‐2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy
Small Methods, EarlyView.Within this work, advancements in scanning spreading resistance microscopy (SSRM) allow charge carrier mapping within 5.5 nm‐thick nanosheet channels. Devices subjected to rapid thermal annealing at 950°C show ∼ 5 nm enhanced phosphorus diffusion, with profiles in close agreement with semi‐atomistic process simulations.
Andrea Pondini +7 more
wiley +1 more source
Engineered valley-orbit splittings in quantum confined nanostructures in silicon [PDF]
, 2011 An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the ...
G. Klimeck +7 more
core +4 more sources
Diamond FinFET without Hydrogen Termination [PDF]
Scientific Reports, 2018 AbstractIn this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction.
Biqin Huang +3 more
openaire +3 more sources
Small Structures, Volume 7, Issue 2, February 2026.We present a unified analytic framework linking subthreshold and above‐threshold conduction in oxide field‐effect transistors by decomposing the drain current into band transport, tail‐state percolation, and interface‐trap diffusion components. Parameter correlation and identifiability analyses enable robust extraction of physical metrics, yielding ...
Mochamad Januar +3 more
wiley +1 more source
Crystals, 2023 In this study, we developed a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2. We investigated the impact of the hysteresis effect on device characteristics of various fin-widths and the degradation induced by stress on ...
Wen-Qi Zhang +3 more
doaj +1 more source
Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET [PDF]
IEEE Transactions on Electron Devices, 2013 We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to-band tunneling (BTBT) leakage-induced bipolar effect is found to result in an amplified BTBT leakage for GeOI FinFET.
Vita Pi-Ho Hu +3 more
openaire +1 more source
Ultra‐Fast, Low‐Resistance Nano Gap Electromechanical Switch for Power Gating Applications
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.An ultra‐small 20 nm air gap and a high‐stiffness architecture enable a MEMS power‐gating switch that combines 0.95 Ω on‐resistance with 30 ns switching while maintaining off‐state leakage below 100 fA. Fabricated below 200 °C, the device is compatible with BEOL and monolithic 3D integration, overcoming the long‐standing resistance–speed trade‐off ...
Tae‐Soo Kim +5 more
wiley +1 more source
Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies [PDF]
, 2005 CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures.
Annema, Anne-Johan, Nauta, Bram
core +2 more sources
FinFETs: From Devices to Architectures [PDF]
Advances in Electronics, 2014 Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to the presence of multiple (two/three) gates, FinFETs/Trigate FETs are able to tackle short-channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology ...
Debajit Bhattacharya, Niraj K. Jha
openaire +1 more source