Results 81 to 90 of about 11,359 (209)
InfoMat, Volume 8, Issue 2, February 2026.Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho +11 more
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IET Circuits, Devices and SystemsThe geometrical parameters of the fin-shaped field-effect transistor (FinFET) significantly affect the outcomes of the FinFET-based designs. Various machine learning (ML) schemes have been presented to optimize the geometrical parameters of the FinFET ...
Vijayalaxmi Kumbar, Manisha Waje
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Multi-Channel Step FinFET With Spacer Engineering
IEEE AccessMulti-channel FinFET ( $\text{M}_{\textbf {ch}}$ -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration.
Rinku Rani Das, Alex James
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Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices [PDF]
EPJ Web of ConferencesThis article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET.
Datta Emona, Basu Arnab, Paul Sayan
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Micromachines, 2020 As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators.
Cristina Medina-Bailon +8 more
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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability [PDF]
, 2018 Performance, scalability and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3D simulation tools.
Elmessary, Muhammad A. +4 more
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Small Structures, Volume 7, Issue 2, February 2026.We present a unified analytic framework linking subthreshold and above‐threshold conduction in oxide field‐effect transistors by decomposing the drain current into band transport, tail‐state percolation, and interface‐trap diffusion components. Parameter correlation and identifiability analyses enable robust extraction of physical metrics, yielding ...
Mochamad Januar +3 more
wiley +1 more source
Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor
IEEE Journal of the Electron Devices Society, 2017 The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the ...
Eunah Ko +4 more
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Sensors, 2020 Wireless Capsule Endoscopy is a state-of-the-art technology for medical diagnoses of gastrointestinal diseases. The amount of data produced by an endoscopic capsule camera is huge.
Ioannis Intzes +2 more
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Ultra‐Fast, Low‐Resistance Nano Gap Electromechanical Switch for Power Gating Applications
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.An ultra‐small 20 nm air gap and a high‐stiffness architecture enable a MEMS power‐gating switch that combines 0.95 Ω on‐resistance with 30 ns switching while maintaining off‐state leakage below 100 fA. Fabricated below 200 °C, the device is compatible with BEOL and monolithic 3D integration, overcoming the long‐standing resistance–speed trade‐off ...
Tae‐Soo Kim +5 more
wiley +1 more source