Effect of pad and slurry on fixed abrasive polishing of gallium oxide crystal
Gallium oxide crystal is one of the most representative fourth generation semiconductor materials with the advantages of high band gap, high voltage resistance and short absorption cutoff edge. It has broad application prospects.
WU Cheng +4 more
doaj +5 more sources
Study on Wavelet Packet Energy Characteristics on Friction Signal of Lapping with the Fixed Abrasive Pad [PDF]
The surface condition of the fixed abrasive pad (FAP) has a significant impact on its machining performance, workpiece material removal rate (MRR), and surface roughness.
Zhankui Wang +5 more
doaj +4 more sources
The effect of slurries on lapping performance of fixed abrasive pad for SiN ceramics [PDF]
In this paper, a series of experiments were carried out to explore the effect of slurry pH on materials removal rate (MRR) and surface quality in lapping of Si 3 N 4 ceramics wafers with fixed abrasive pad (FAP) using different slurries with different pH.
Wang Zhankui +5 more
doaj +2 more sources
Chemical mechanical polishing (CMP) technology is one of the key technologies to realize the global planarization of semiconductor wafer surfaces. With the increasing popularity and universality of its application, more and higher requirements are put ...
Jianguo Yao +4 more
doaj +2 more sources
A Novel Method of Adding Sucrose in Fixed Abrasive Pads for Self-Conditioning. [PDF]
A method of self-conditioning a fixed abrasive pad via the dissolution of sugar in bonds was proposed. Self-conditioning means that pads can be dressed by themselves during lapping processing. Self-conditioning experiments were conducted on a series of sucrose resin-based fixed abrasive pads for the lapping of monocrystalline silicon wafers.
Ma F +6 more
europepmc +4 more sources
Lapping of Soft-Brittle Lithium Niobate Crystal with Fixed Abrasive Pad. [PDF]
Lithium niobate (LiNbO3, LN) single crystal is widely used in optoelectronic fields due to its excellent performance. However, its low hardness, high brittleness, and strong anisotropy lead to low processing efficiency and poor surface quality. Hydrophilic fixed abrasive lapping technology was adopted for the thinning of LN wafers in this research. The
Zhu N, Gao X, Tang C, Chen J, Zhu Y.
europepmc +2 more sources
A Novel Noise Reduction Approach of Acoustic Emission (AE) Signals in the SiC Lapping Process on Fixed Abrasive Pads [PDF]
Acoustic emission (AE) technology has been widely utilized to monitor the SiC wafer lapping process. The root-mean-square (RMS) of the time–domain eigenvalues of the AE signal has a linear relationship with the material removal rate (MRR).
Jie Lin +10 more
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Optimal design and experimental study of fixed abrasive pads based on coupling of damping regulation and pellet arrangement [PDF]
Lapping and polishing technology is an efficient processing method for wafer planarization processing. The structure of the fixed abrasive pad (FAP) is one of the most concerning issues in the research. The FAP structure affects the pressure distribution
C. Xu, C. Fang, Y. Li, C. Liu
doaj +1 more source
Abrasive water jetting is an effective dressing method for a fixed abrasive pad (FAP) and can improve FAP machining efficiency and the impact of abrasive water jet (AWJ) pressure on the dressing effect; moreover, the machining state of FAP after dressing
Yanling Zheng +5 more
doaj +1 more source
Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad
4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods.
Jiyuan Zhong +6 more
doaj +1 more source

