Results 231 to 240 of about 2,060,378 (305)

Trends and Future Challenges of 3D NAND Flash Memory

International Memory Workshop, 2023
NAND flash memory industry has made significant progress in the density and technology since the introduction of 3D NAND flash memory. It took only a few years to change the mainstream of the NAND flash memory from 2D NAND to 3D NAND thanks to its ...
S. Shim, J. Jang, J. Song
semanticscholar   +1 more source

Review of Semiconductor Flash Memory Devices for Material and Process Issues

Advances in Materials, 2022
Vertically integrated NAND (V‐NAND) flash memory is the main data storage in modern handheld electronic devices, widening its share even in the data centers where installation and operation costs are critical. While the conventional scaling rule has been
S. Kim, Soo Kyeom Yong, Whayoung Kim, Su-Hyuk Kang, Hyeon Woo Park, Kyung Jean Yoon, Dong Sun Sheen, Seho Lee, C. S. Hwang   +8 more
semanticscholar   +1 more source

Characterization Summary of Performance, Reliability, and Threshold Voltage Distribution of 3D Charge-Trap NAND Flash Memory

ACM Transactions on Storage, 2022
Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD.
Weihua Liu, Fei Wu, Xiang Chen, Meng Zhang, Yu Wang, Xiangfeng Lu, Changsheng Xie   +6 more
semanticscholar   +1 more source

Networked SSD: Flash Memory Interconnection Network for High-Bandwidth SSD

Micro, 2022
As the flash memory performance increases with more bandwidth, the flash memory channel or the interconnect is becoming a bigger bottleneck to enable high performance SSD system.
Jiho Kim, Seokwon Kang, Yongjun Park, John Kim   +3 more
semanticscholar   +1 more source

ParaBit: Processing Parallel Bitwise Operations in NAND Flash Memory based SSDs

Micro, 2021
Processing-in-memory (PIM) and in-storage-computing (ISC) architectures have been constructed to implement computation inside memory and near storage, respectively. While effectively mitigating the overhead of data movement from memory and storage to the
Congming Gao, Xin Xin, Youyou Lu, Youtao Zhang, Jun Yang, J. Shu   +5 more
semanticscholar   +1 more source

An Embedded nand Flash-Based Compute-In-Memory Array Demonstrated in a Standard Logic Process

IEEE Journal of Solid-State Circuits, 2022
A neural network hardware inspired by the 3-D NAND flash array structure was experimentally demonstrated in a standard 65-nm CMOS process. Logic-compatible embedded flash memory cells were used for storing multi-level synaptic weights while a bit-serial ...
Min-su Kim, Muqing Liu, L. Everson, C. Kim   +3 more
semanticscholar   +1 more source

Flash Memories

1999
Most of the current applications of electronics require non-volatile memories, which can keep stored information when the power supply is switched off. Flash memories (in which a single cell can be electrically programmed and a large number of cells are usually electrically erased at the same time) are the most versatile non-volatile memories. They are
Frank Ruei-Ling Lin, Rick Shih-Jye Shen, Evans Ching-Song Yang, Charles Ching-Hsiang Hsu, Amy Hsiu-Fen Chou   +4 more
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Graphene Flash Memory

ACS Nano, 2011
Graphene's single atomic layer of sp(2) carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of ...
Hong, Augustin, Song, Emil B., Yu, Hyung Suk, Allen, Matthew J., Kim, Jiyoung, Fowler, Jesse D., Wassei, Jonathan K., Park, Youngju, Wang, Yong, Zou, Jin, Kaner, Richard B., Weiller, Bruce H., Wang, Kang L.   +12 more
openaire   +3 more sources

Exploiting Asymmetric Errors for LDPC Decoding Optimization on 3D NAND Flash Memory

IEEE transactions on computers, 2020
By stacking layers vertically, the adoption of 3D NAND has significantly increased the capacity for storage systems. The complex structure of 3D NAND introduces more errors than planer flash.
Qiao Li, Liang Shi, Yufei Cui, C. Xue
semanticscholar   +1 more source

13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique

IEEE International Solid-State Circuits Conference, 2020
Ever since a 3b/cell (TLC) NAND Flash memory became the mainstream in nonvolatile memory market, a new demand for a 4b/cell (QLC) NAND flash memory has been emerging for low-cost applications.
Hwang Huh, Wanik Cho, Jinhaeng Lee, Yujong Noh, Yongsoo Park, Sunghwa Ok, Jongwoo Kim, Kayoung Cho, Hyunchul Lee, Geonu Kim, Kangwoo Park, Kwanho Kim, H. Lee, Soo-Jin Chai, Chankeun Kwon, Hanna Cho, Chanhui Jeong, Yujin Yang, J. Goo, Jangwon Park, Juhyeong Lee, Heonki Kirr, Kangwook Jo, Cheol-Goo Park, Hyeonsu Nam, Hyun-Min Song, Sangkyu Lee, Woopyo Jeong, K. Ahn, T. Jung   +29 more
semanticscholar   +1 more source