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International Memory Workshop, 2020
Deep neural networks (DNNs) are very popular these years owing to their powerful capability in many artificial intelligence (AI) applications of classification and recognition.
Po-Kai Hsu +10 more
semanticscholar +1 more source
Deep neural networks (DNNs) are very popular these years owing to their powerful capability in many artificial intelligence (AI) applications of classification and recognition.
Po-Kai Hsu +10 more
semanticscholar +1 more source
An ultrafast bipolar flash memory for self-activated in-memory computing
Nature Nanotechnology, 2023Xiaohe Huang +5 more
semanticscholar +1 more source
Analysis on Heterogeneous SSD Configuration with Quadruple-Level Cell (QLC) NAND Flash Memory
International Memory Workshop, 2019This paper investigates optimal heterogeneously-integrated SSD configuration [1] with various non-volatile memories including quadruple-level cell (QLC) NAND flash [2] considering SSD performance, energy consumption and SSD endurance lifetime.
Yoshiki Takai +4 more
semanticscholar +1 more source
1999
Summary form only given. Memory reliability is a key issue of flash technology. The continuous trend to increase the storage density is driving the technology close to its physical limits and new reliability challenges are met. The tutorial discussed the failure mechanisms limiting memory endurance and data retention.
Paolo Cappelletti, Alberto Modelli
openaire +1 more source
Summary form only given. Memory reliability is a key issue of flash technology. The continuous trend to increase the storage density is driving the technology close to its physical limits and new reliability challenges are met. The tutorial discussed the failure mechanisms limiting memory endurance and data retention.
Paolo Cappelletti, Alberto Modelli
openaire +1 more source
Reliability of 3D NAND flash memory with a focus on read voltage calibration from a system aspect
Non-Volatile Memory Technology Symposium, 2019This paper discusses the reliability challenges of 3D NAND flash memory and their impact on flash management for enterprise storage applications. Emphasis is given to the read voltage calibration and its critical role in achieving low error-rates and low
N. Papandreou +7 more
semanticscholar +1 more source
MRS Bulletin, 2004
AbstractIn order to meet technology scaling in the field of solid-state memory and data storage, the mainstream transistor-based flash technologies will start evolving to incorporate material and structural innovations. Dielectric scaling in nonvolatile memories is approaching the point where new approaches will be required to meet the scaling ...
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AbstractIn order to meet technology scaling in the field of solid-state memory and data storage, the mainstream transistor-based flash technologies will start evolving to incorporate material and structural innovations. Dielectric scaling in nonvolatile memories is approaching the point where new approaches will be required to meet the scaling ...
openaire +1 more source
Microelectronics Reliability, 1998
Abstract Flash memories entered the nonvolatile memory scenario only a few years ago, and now these kind of memories are battling to substitute either EEPROM or EPROM. In fact, their peculiarities are becoming quite interesting in present day applications.
C Golla, S Ghezzi
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Abstract Flash memories entered the nonvolatile memory scenario only a few years ago, and now these kind of memories are battling to substitute either EEPROM or EPROM. In fact, their peculiarities are becoming quite interesting in present day applications.
C Golla, S Ghezzi
openaire +1 more source
Proceedings of the 42nd Annual IEEE/ACM International Symposium on Microarchitecture, 2009
Despite flash memory's promise, it suffers from many idiosyncrasies such as limited durability, data integrity problems, and asymmetry in operation granularity. As architects, we aim to find ways to overcome these idiosyncrasies while exploiting flash memory's useful characteristics.
Laura M. Grupp +6 more
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Despite flash memory's promise, it suffers from many idiosyncrasies such as limited durability, data integrity problems, and asymmetry in operation granularity. As architects, we aim to find ways to overcome these idiosyncrasies while exploiting flash memory's useful characteristics.
Laura M. Grupp +6 more
openaire +1 more source
VLSI Design 2000. Wireless and Digital Imaging in the Millennium. Proceedings of 13th International Conference on VLSI Design, 2002
Flash memories can undergo three different types of disturbances, DC-programming, DC-erasure, and drain disturbance. These faults are specific to flash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults.
M.Gh. Mohammad, K.K. Saluja, A. Yap
openaire +1 more source
Flash memories can undergo three different types of disturbances, DC-programming, DC-erasure, and drain disturbance. These faults are specific to flash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults.
M.Gh. Mohammad, K.K. Saluja, A. Yap
openaire +1 more source
IEEE Instrumentation & Measurement Magazine, 2005
Driven by the demand for more versatile personal electronic devices such as cellular phones and handheld computers, flash memory has advanced rapidly to higher volume density and performance levels. Today, semiconductor manufacturers find a growing opportunity for more advanced flash memories delivered either as standalone flash devices; embedded as ...
openaire +1 more source
Driven by the demand for more versatile personal electronic devices such as cellular phones and handheld computers, flash memory has advanced rapidly to higher volume density and performance levels. Today, semiconductor manufacturers find a growing opportunity for more advanced flash memories delivered either as standalone flash devices; embedded as ...
openaire +1 more source

