Results 261 to 270 of about 2,060,378 (305)
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Rate-Adaptive Protograph LDPC Codes for Multi-Level-Cell NAND Flash Memory
IEEE Communications Letters, 2018The multi-level-cell (MLC) NAND flash memory exhibits a diversity of the raw bit error rate (BER) over different program/erase (P/E) cycles and different types of bits within a memory cell.
Pingping Chen, K. Cai, Shi Zheng
semanticscholar +1 more source
1999
The threshold voltage of a Flash memory transistor depends analogically on the charge amount stored on its floating gate, and if a number m of different threshold levels can be reliably programmed and sensed in a memory cell, this can store n = log2 m bits, thereby overcoming the traditional one-to-one correspondence between cell count and memory ...
TORELLI, GUIDO +3 more
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The threshold voltage of a Flash memory transistor depends analogically on the charge amount stored on its floating gate, and if a number m of different threshold levels can be reliably programmed and sensed in a memory cell, this can store n = log2 m bits, thereby overcoming the traditional one-to-one correspondence between cell count and memory ...
TORELLI, GUIDO +3 more
openaire +2 more sources
IEE Review, 2003
Ever falling chip geometries are beginning to raise serious doubts as to the long-term viability of flash. Quantum tunnelling is integral to the operation of flash memory, and as chips are getting smaller the ultra-thin tunnelling barrier is becoming increasingly prone to breaking down.
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Ever falling chip geometries are beginning to raise serious doubts as to the long-term viability of flash. Quantum tunnelling is integral to the operation of flash memory, and as chips are getting smaller the ultra-thin tunnelling barrier is becoming increasingly prone to breaking down.
openaire +1 more source
Microelectronics Reliability, 1998
With reference to the mainstream technology, the most relevant failure mechanisms which affect yield and reliability of Flash memory are reviewed, showing the primary role played by tunnel oxide defects. The effectiveness of a good test methodology combined with a proper product design for screening at wafer sort latent defects of tunnel oxide is ...
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With reference to the mainstream technology, the most relevant failure mechanisms which affect yield and reliability of Flash memory are reviewed, showing the primary role played by tunnel oxide defects. The effectiveness of a good test methodology combined with a proper product design for screening at wafer sort latent defects of tunnel oxide is ...
openaire +1 more source
2001
This paper provides an overview of Floating Gate technology, the architectures used in it, and the major applications in which it is found. New technologies and devices are discussed and compared to industry standard devices.
PAVAN, Paolo, ZANONI E.
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This paper provides an overview of Floating Gate technology, the architectures used in it, and the major applications in which it is found. New technologies and devices are discussed and compared to industry standard devices.
PAVAN, Paolo, ZANONI E.
openaire +1 more source
2008
NAND Flash memories are the storage media used inside Solid State Drives (SSDs). Indeed, a single drive for enterprise applications can contain up to hundreds of Flash chips. Flash memories are non-volatile in the sense that they can retain the information even when powered off, but they wear out, i.e.
R. Micheloni, A. Marelli, R. Ravasio
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NAND Flash memories are the storage media used inside Solid State Drives (SSDs). Indeed, a single drive for enterprise applications can contain up to hundreds of Flash chips. Flash memories are non-volatile in the sense that they can retain the information even when powered off, but they wear out, i.e.
R. Micheloni, A. Marelli, R. Ravasio
openaire +1 more source
2017
4 zettabytes (4 billion terabytes) of data generated in 2013, 44 zettabytes predicted for 2020 and 185 zettabytes for 2025. These figures are staggering and perfectly illustrate this new era of data deluge. Data has become a major economic and social challenge.
Boukhobza, Jalil, Olivier, Pierre
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4 zettabytes (4 billion terabytes) of data generated in 2013, 44 zettabytes predicted for 2020 and 185 zettabytes for 2025. These figures are staggering and perfectly illustrate this new era of data deluge. Data has become a major economic and social challenge.
Boukhobza, Jalil, Olivier, Pierre
openaire +1 more source
Journal of Electrical Electronics Engineering
In this paper, I introduce a new design for Flash Memory Device.
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In this paper, I introduce a new design for Flash Memory Device.
openaire +1 more source