Results 221 to 230 of about 20,361 (264)

High-level behavior of power rectifiers: A quantitative analysis of the forward voltage drop

IEEE Transactions on Electron Devices, 1978
In forward biased power rectifiers, quasi-neutrality holds in all regions of the device. As a consequence, numerical analysis of the behavior of the devices can be carried out without involving the treatment of Poisson's equation. This allows fast and accurate computation of the forward J(V) characteristic.
A. Munoz-Yague, P. Leturcq
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Excess carrier density and forward voltage drop in trench insulated gate bipolar transistor (TIGBT)

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), 2003
Decrease in the forward voltage drop due to the enhanced carrier density at the cathode side of the trench insulated gate transistor (TIGBT) is studied as a function of the aspect ratio between the accumulation layer and cell size as well as the applied gate voltage and compared with those for the planar DMOS-IGBT.
null Hyoung-Woo Kim, null Min-Su Kim, null Yearn-Ik Choi, null Sang-Koo Chung   +3 more
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The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier

Solid-State Electronics, 1999
Abstract A novel high voltage Schottky rectifier, called the Graded Doped Trench MOS Barrier Schottky (GD-TMBS) rectifier, is described in this paper. It is shown to have very low forward drop with excellent reverse blocking characteristics through device simulation and electrical characterization of fabricated devices. A linearly graded drift region
Srikanth Mahalingam, B.Jayant Baliga
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Correlation between forward voltage drop and local carrier lifetime for a large area segmented thyristor

IEEE Transactions on Electron Devices, 1995
The forward voltage drop for individual segments of a large area thyristor has been correlated to the local, bulk carrier lifetime by lifetime mapping of the the wafer after final device processing. The lifetime mapping was performed under high injection conditions using an all-optical technique where carriers were generated by a short YAG laser pulse ...
J. Linnros, R. Revsater, L. Heijkenskjold, P. Norlin   +3 more
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Electron irradiation for adjusting the reverse recovery time and forward voltage drop characteristics of fast diodes

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
Abstract The electron linear accelerator ALIN-10 has been used to irradiate at room temperature and high temperature silicon diodes type BA159, BAX157 and 6DRR1 (manufacturer – Baneasa S.A.-factory 2300, Romania). The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage, reverse ...
Elena Iliescu, Anastase Niculescu, Viorel Banu, Anca Nichita, Nicoleta Sturzu   +4 more
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A low forward drop high voltage trench MOS barrier Schottky rectifier with linearly graded doping profile

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 2002
A novel high voltage Schottky rectifier, called the graded doped trench MOS barrier Schottky (GD-TMBS) rectifier, is described in this paper. A linearly graded drift region doping profile is shown to result in a uniform electric field in the drift region, resulting in the ability to support blocking voltages proportional to the trench depth.
S. Mahalingam, B.J. Baliga
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A Compensation Method of Dead-Time and Forward Voltage Drop for Inverter Operating at Low Frequency

Journal of Electrical Engineering & Technology, 2019
The dead-time is introduced to prevent the upper and lower power devices of the same leg from conducting simultaneously. However, it will cause the actual output voltage deviate from the desired voltage and the load current distortion will occur, which is especially unexpected when the inverter operates at a low frequency.
Lingyun Zhao, Wenxiang Song, Jiuyi Feng
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High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5- $\mu \text{m}$ -Thin SOI Layer for Reducing the Forward Voltage Drop

IEEE Transactions on Electron Devices, 2016
In this paper, a new high-voltage electron injection enhanced tridimensional channel lateral insulated gate bipolar transistor (EIETC-LIGBT) on 1.5- $\mu \text{m}$ -thin silicon-on-insulator (SOI) layer is proposed to reduce the forward voltage drop.
Jing Zhu, Zhuo Yang, Weifeng Sun, Hui Yu, Jincheng Zhou, Yi Sun   +5 more
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Effect of anisotropic material properties on the forward voltage drop in 6H- and 4H-SiC power diode structures

Semiconductor Science and Technology, 1999
It is demonstrated by numerical simulation that the anisotropic material properties of 6H-SiC can have an important effect on the forward voltage drop of 10 kV 6H-SiC power diodes. A pronounced difference in the carrier distribution was seen for substrates with the surface normal parallel or orthogonal to the c-axis.
O Tornblad, M Östling, U Lindefelt, B Breitholtz   +3 more
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Compensation of the effects of the forward voltage drop of power switches on direct torque controlled synchronous machine drive

IEEE International Electric Machines and Drives Conference, 2003. IEMDC'03., 2003
The direct torque control scheme is an outstanding scheme based on space vector theory. However, at low speed, the performance is not so desirable. The effect of forward voltage drop and dead-time are analyzed and compensated in this paper. Modeling results show that the blindness to the forward voltage drop of the power switches may cause oscillation ...
null Lixin Tang, M.F. Rahman
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