Results 161 to 170 of about 211,716 (291)

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Low-Density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes. [PDF]

Nano Lett
Covre Da Silva SF, Garcia AJ, Aigner M, Weidinger C, Krieger TM, Undeutsch G, Deneke C, Bashir I, Manna S, Peter M, Brytavskyi I, Aberl J, Rastelli A.   +12 more
europepmc   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

Numerical investigation of ultrathin CIGS solar cells featuring SiO₂/GaAs double rear passivation. [PDF]

Sci Rep
Jafari SMH, Orouji AA, Abbasi A.
europepmc   +1 more source

Quantitative Model of Internal Analyzer Scattering in a Hemispherical Electron Analyzer and Its Application to Improve the Accuracy of the Transmission Function

Surface and Interface Analysis, EarlyView.
ABSTRACT Internal scattering within hemispherical electron analyzers (HEA) is common when operating at low pass energies, where the instrument resolution of X‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy experiments are at their best.
J. Laverock, N. A. Fox
wiley   +1 more source

Field-tunable charge confinement in III-V layered nanowire-array superlattices. [PDF]

Sci Rep
Méndez-Camacho R, Cruz-Hernández E, López-López M.   +2 more
europepmc   +1 more source

Nanoscale Ripples at the Surface of SrTiO3 Irradiated by a Broad Low‐Energy Ar+ (7 keV) Ion Beam

Small, EarlyView.
Broad Ar ion beam irradiation creates self‐organized ripple nanostructures on oxide surfaces. A schematic illustrates the process, while cross‐sectional STEM imaging captures the ripple morphology. Complementary elemental mapping by EELS highlights nanoscale chemical variations, linking ion‐beam nanostructuring with structural and compositional ...
Mohammad S. Jamal, Isabelle Monnet, Jimmy Rangama, Victor Pierron, Bruno Guillet, Stéphane Guillous, Stéphane Flament, Emmanuel Balanzat, Laurence Méchin, Mamour Sall   +9 more
wiley   +1 more source

Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation. [PDF]

Small
Denis N, Sharma AS, Blundo E, Santangeli F, De Vincenzi P, Pallucchi R, Yukimune M, Vogel A, Zardo I, Polimeni A, Ishikawa F, De Luca M.   +11 more
europepmc   +1 more source

Polarization‐Dependent Elliptical and Rectangular Mie Voids

Small, EarlyView.
Polarization‐dependent Mie void resonances are realized by introducing anisotropic low‐index inclusions embedded in high‐index materials. Elliptical and rectangular void geometries enable controlled tuning of resonance behavior and optical mode formation.
Serkan Arslan, Shaban B. Sulejman, Sebastian Klein, Jonathan Haehner, Julian Schwab, Dominik Ludescher, Lukas Wesemann, Ann Roberts, Harald Giessen, Mario Hentschel   +9 more
wiley   +1 more source

Over 1.65 GW cm^-2 sr^-1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL. [PDF]

Light Sci Appl
Zhang Z, Zhan W, Xiao Y, Luo C, Zhou H, Yang W, Cheng Y, Yu H, Li Q, Li X, Zhang C, Wang J.   +11 more
europepmc   +1 more source