Results 261 to 270 of about 211,716 (291)
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2017
The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values ??? which yield the diode maximum generation efficiency ??? for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on ...
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The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values ??? which yield the diode maximum generation efficiency ??? for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on ...
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2016
???? ???????????? ?????????????????????????????????? ???????????? ???????????????????????? ???????????????? ???????????????????? ?? GaAs ?????????????????????? ???????????????? ???????????????????????? ???????????? ?????????? ?? ???????????????????? ?????????????????? ???????????????????? ???? ?????????????????? ????????????????. ?????????????? ????????
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???? ???????????? ?????????????????????????????????? ???????????? ???????????????????????? ???????????????? ???????????????????? ?? GaAs ?????????????????????? ???????????????? ???????????????????????? ???????????? ?????????? ?? ???????????????????? ?????????????????? ???????????????????? ???? ?????????????????? ????????????????. ?????????????? ????????
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Electronic states of GaAs and GaAs+
The Journal of Chemical Physics, 1987Complete active space MCSCF (CASSCF) followed by first-order configuration interaction (FOCI) calculations are carried out on low-lying electronic states of GaAs and GaAs+. Among the 12 electronic states of GaAs considered here, six of them are bound and their spectroscopic properties are calculated.
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Spectroscopic constants and potential energy curves of GaAs, GaAs+, and GaAs−
Journal of Molecular Spectroscopy, 1990Abstract Twenty electronic states of GaAs, 12 electronic states of GaAs + , and 13 electronic states of GaAs − are investigated using relativistic ab initio complete active space MCSCF (CASSCF) followed by large-scale configuration interaction calculations which included up to 700 000 configurations.
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2017
?? ?????????????????? ?????????????????? ?????? n-InxGa??????xAs/GaAs (x ??? 0,2) ???????????????????????? ???????????????????? ???????????????????????? ?????????? ??xx(?? ) 2D-???????????????????????? ???????? ?? ?????????????? ???????????????????? ?? ?????????????????????????? ???????????????????? ?????????????? ???????????????? ??????????????????????
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?? ?????????????????? ?????????????????? ?????? n-InxGa??????xAs/GaAs (x ??? 0,2) ???????????????????????? ???????????????????? ???????????????????????? ?????????? ??xx(?? ) 2D-???????????????????????? ???????? ?? ?????????????? ???????????????????? ?? ?????????????????????????? ???????????????????? ?????????????? ???????????????? ??????????????????????
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2019
?????????????????? ???????????????????? ???????????????????????? ?????????????????? ???????????????????????? ?? ???????????????????????? ???????????????????????????????????????? ?????????????????????????? ?????????????????????? ?????????????????? m1???pGaAs???nGaAs???m2 ?? ???????????????? ???????????????? ???????? ?????????????? ??????????????????, ???
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?????????????????? ???????????????????? ???????????????????????? ?????????????????? ???????????????????????? ?? ???????????????????????? ???????????????????????????????????????? ?????????????????????????? ?????????????????????? ?????????????????? m1???pGaAs???nGaAs???m2 ?? ???????????????? ???????????????? ???????? ?????????????? ??????????????????, ???
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2008
We have investigated the real and chemically sulfided gallium arsenide surfaces by the electroreflectance method in the E0-spectral region. On the basis of quantitative analysis of the experimental data, the flat band potential, energies of quantized levels, width of a quantum well, and the intrinsic mechanical stresses depending on sulfiding ...
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We have investigated the real and chemically sulfided gallium arsenide surfaces by the electroreflectance method in the E0-spectral region. On the basis of quantitative analysis of the experimental data, the flat band potential, energies of quantized levels, width of a quantum well, and the intrinsic mechanical stresses depending on sulfiding ...
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2016
?? ???????????? ?????????????????????? ?????????????????????????? ???????????????????? ?????????????? ?? ???????????? ?? ?????? ???? ???????????? GaAs, ???? ??????????, ???? ?????? ???????????????? ???? ??????????????????????. ???????????????????????? ???????????????????? ???????????????? ?? ???????????????????? ?????????????????? ?????????????????? ???
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?? ???????????? ?????????????????????? ?????????????????????????? ???????????????????? ?????????????? ?? ???????????? ?? ?????? ???? ???????????? GaAs, ???? ??????????, ???? ?????? ???????????????? ???? ??????????????????????. ???????????????????????? ???????????????????? ???????????????? ?? ???????????????????? ?????????????????? ?????????????????? ???
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