Results 181 to 190 of about 3,422 (258)

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT. [PDF]

Micromachines (Basel), 2022
Qin Y, Chai C, Li F, Liang Q, Wu H, Yang Y.   +5 more
europepmc   +1 more source

Global convergence of a blind iterative algorithm for simultaneous conjugate match of N-ports. [PDF]

Sci Rep
Colangeli S, Serino A, Ciccognani W, Longhi PE, Limiti E.   +4 more
europepmc   +1 more source

Evolution in Lithography Techniques: Microlithography to Nanolithography. [PDF]

Nanomaterials (Basel), 2022
Sharma E, Rathi R, Misharwal J, Sinhmar B, Kumari S, Dalal J, Kumar A.   +6 more
europepmc   +1 more source

A 0.617-2.7 GHz Highly Linear High-Power Dual Port 15 Throws Antenna Switch Module (DP15T-ASM) with Branched-Antenna Technique and Termination Mode. [PDF]

Sensors (Basel), 2022
Rad RE, Choi KD, Kim SJ, Pu YG, Jung YJ, Huh HK, Yoo JM, Kim SK, Lee KY.   +8 more
europepmc   +1 more source

Microstructure Characterization and Interfacial Reactions between Au-Sn Solder and Different Back Metallization Systems of GaAs MMICs. [PDF]

Materials (Basel), 2020
Wu N, Hu Y, Sun S.
europepmc   +1 more source

GRAPHENE HIGH EFFICIENCY GAAS PHEMT DOHERTY POWER AMPLIFIER FOR 6-7 GHZ WIRELESS APPLICATIONS

openalex   +1 more source

Novel electrostatic discharge (ESD) protection solution in GaAs pHEMT technology

, 2012
Juin J. Liou, Qiang Cui
openalex   +2 more sources

Ultra-wideband MMICs for remote sensing applications [PDF]

, 2003
Johansen, Tom Keinicke, Krozer, Viktor, Vidkjær, Jens   +2 more
core   +2 more sources

On the correlation between drain and gate currents and light emission in GaAs PHEMTs biased in the impact ionisation regime

, 1998
F. Fantini
openalex   +1 more source