Results 221 to 230 of about 2,578,155 (248)

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte   +9 more
wiley   +1 more source

Formulation of triphala-based products: Focus on gallic acid content and health benefits. [PDF]

open access: yesJ Adv Pharm Technol Res
Chaiprateep EO   +4 more
europepmc   +1 more source

Electrochemical degradation of gallic acid on a BDD anode

open access: yesChemosphere, 2009
The electrochemical oxidation of gallic acid (3,4,5-trihydroxybenzoic acid) has been studied on a boron-doped diamond anode (BDD). Cyclic voltammetries, chronoamperometries and bulk electrolyses were performed to characterise the electrochemical ...
Marco Panizza, Giacomo Cerisola
exaly   +2 more sources

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