Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation [PDF]
Nanoscale Research Letters, 2021 During the nano-cutting process, monocrystalline gallium arsenide is faced with various surface/subsurface deformations and damages that significantly influence the product’s performance.
Chenghao Chen, Min Lai, Fengzhou Fang
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Measuring Non-Destructively the Total Indium Content and Its Lateral Distribution in Very Thin Single Layers or Quantum Dots Deposited onto Gallium Arsenide Substrates Using Energy-Dispersive X-ray Spectroscopy in a Scanning Electron Microscope [PDF]
Nanomaterials, 2022 The epitaxial deposition of a precise number, or even fractions, of monolayers of indium (In)-rich semiconductors onto gallium arsenide (GaAs) substrates enables the creation of quantum dots based on InAs, InGaAs and indium phosphide (InP) for infrared ...
Thomas Walther
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Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy [PDF]
Nature Communications, 2019 Gallium arsenide holds record efficiency for single junction solar cells, but high production costs limit applications. Here Metaferia et al. show high quality GaAs and GaInP at rates exceeding 300 and 200 micrometers per hour by dynamic hydride vapor ...
Wondwosen Metaferia +4 more
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Dynamically reconfigurable high-efficiency terahertz metasurface holograms
EPJ Applied Metamaterials, 2021 A reflective, dynamically reconfigurable, high-efficiency metasurface holographic scheme is presented in this paper, which is realized by pumping thin gallium arsenide wafers with a structured femtosecond laser.
Hu Mengyuan, Tian Zhen
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Single Stage Low Noise Inductor-Less TIA for RF Over Fiber Communication
IEEE Access, 2021 This paper presents design, mathematical analysis, and measurement of low noise single-stage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar complementary metal-oxide-semiconductor (BiCMOS) silicon-germanium (SiGe) process ...
Vijay Kumar +3 more
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Scientific Reports, 2022 A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a possible solution for optical isolation in high-density integrated power modules. The design and fabrication of LTCC based package are discussed.
Syam Madhusoodhanan +7 more
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Applied Surface Science Advances, 2022 In this study, we report the synthesis of the heterostructure by a simple and inexpensive electrochemical deposition method. As a result, nanocrystallites of the ''desert rose'' type were synthesized on the surface of mono-GaAs.
Yana Suchikova +3 more
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ANALYSIS OF SOLAR ENERGY POTENTIAL BY REMOTE SENSING TECHNIQUES IN VARAŽDINSKA COUNTY, CROATIA [PDF]
The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, 2021 Renewable energy becomes more and more considered as energy production due to great benefits and less environmental impact then traditional energy sources.
N. Kranjčić +4 more
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Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
Фізика і хімія твердого тіла, 2016 Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge
S. P. Novosyadlyi, V. S. Huzik
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Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts
IEEE Access, 2021 This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium ...
Ahid S. Hajo +4 more
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