Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation [PDF]
Nanoscale Research Letters, 2021 During the nano-cutting process, monocrystalline gallium arsenide is faced with various surface/subsurface deformations and damages that significantly influence the product’s performance.
Chenghao Chen, Min Lai, Fengzhou Fang
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Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy [PDF]
Nature Communications, 2019 Gallium arsenide holds record efficiency for single junction solar cells, but high production costs limit applications. Here Metaferia et al. show high quality GaAs and GaInP at rates exceeding 300 and 200 micrometers per hour by dynamic hydride vapor ...
Wondwosen Metaferia +4 more
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Overview of the Current State of Gallium Arsenide-Based Solar Cells. [PDF]
Materials (Basel), 2021 As widely-available silicon solar cells, the development of GaAs-based solar cells has been ongoing for many years. Although cells on the gallium arsenide basis today achieve the highest efficiency of all, they are not very widespread.
Papež N +3 more
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Gallium interstitial contributions to diffusion in gallium arsenide [PDF]
AIP Advances, 2011 A new diffusion path is identified for gallium interstitials, which involves lower barriers than the barriers for previously identified diffusion paths [K. Levasseur-Smith and N. Mousseau, J. Appl. Phys. 103, 113502 (2008), P. A. Schultz and O. A.
Joseph T. Schick, Caroline G. Morgan
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Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators
Open Engineering, 2020 The purpose of this study was to clarify the silicon-germanium dioxide (SiGeO2) and Aluminum Indium Gallium Arsenide (AlInGaAs) based acoustic optic modulators for upgrading transmission performance characteristics.
El-Hageen Hazem M. +2 more
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Measuring Non-Destructively the Total Indium Content and Its Lateral Distribution in Very Thin Single Layers or Quantum Dots Deposited onto Gallium Arsenide Substrates Using Energy-Dispersive X-ray Spectroscopy in a Scanning Electron Microscope [PDF]
Nanomaterials, 2022 The epitaxial deposition of a precise number, or even fractions, of monolayers of indium (In)-rich semiconductors onto gallium arsenide (GaAs) substrates enables the creation of quantum dots based on InAs, InGaAs and indium phosphide (InP) for infrared ...
Thomas Walther
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Emergence of spin-orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide. [PDF]
Nat Commun, 2015 The desire for higher information capacities drives the components of electronic devices to ever smaller dimensions so that device properties are determined increasingly more by interfaces than by the bulk structure of the constituent materials ...
Hupfauer T +8 more
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Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures. [PDF]
Nat Commun, 2015 Search for Majorana fermions renewed interest in semiconductor–superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two ...
Wan Z +5 more
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Negative longitudinal magnetoresistance in gallium arsenide quantum wells [PDF]
Nature Communications, 2019 The attribution of negative longitudinal magnetoresistance (NLMR) in Weyl metals to a chiral anomaly is already challenged. Here, NLMR resembling that of Weyl metals is demonstrated in a non-Weyl-metal GaAs quantum well originating from different types ...
Jing Xu +12 more
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Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field. [PDF]
Nat Commun, 2014 Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing.
Sallen G +10 more
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