Structural and Electrical Characterization of Solution‐Deposited β‐Ga2O3:Al
physica status solidi (b), EarlyView.Aluminum‐doped beta gallium oxide is structurally and electrically characterized for electronic applications by making electrode contacts of four‐metal‐stack layers using electron beam evaporator with the intent of making an ideal diode. Metal contacts are analyzed by I–V and C–V analyzer to get the ideality factor of the doped oxide.
Valentine W. Muramba +2 more
wiley +1 more source
Theoretical comparison and optimization of cadmium telluride and gallium arsenide photon-counting detectors for contrast-enhanced spectral mammography. [PDF]
J Med Imaging (Bellingham), 2023 Schaeffer C +3 more
europepmc +1 more source
Exploring stimuli‐responsive luminescence in metal halide perovskites for emerging applications
Responsive Materials, EarlyView.The sensitivity of metal halide perovskites to external stimuli categorizes them as emerging responsive materials. This review systematically discusses their stimuli‐responsive luminescent properties, elucidates their diverse applications in information‐related domains, and outlines the current challenges and prospects.
Yali Zhou +4 more
wiley +1 more source
“The Thermal Wave” in Technology of Crystal Growth from the Melt [PDF]
Журнал нано- та електронної фізики, 2013 It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method.
V.G. Kosushkin +4 more
doaj
Improving Performance of Germanium-Based Vertical Tunneling Field Effect Transistor Using GaAs as Channel [PDF]
مجله مدل سازی در مهندسیIn this paper, Germanium-based vertical tunneling transistors are investigated and the electrical properties of the transistor in two modes of Germanium utilization as well as Gallium Arsenide as the channel are compared.
Shoaib Babaei tooski +2 more
doaj +1 more source
Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave. [PDF]
Nanomaterials (Basel), 2022 Walther T.
europepmc +1 more source
Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide [PDF]
, 1967 H. Holloway, L. C. Bobb
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Tailoring in‐Plane Permittivity Gradients by Shadow Mask Molecular Beam Epitaxy
Small Methods, EarlyView.In‐plane gradient permittivity materials (GPMs) are materials whose permittivity varies in the horizontal direction. By tuning mask design parameter, in‐plane permittivity gradient can be controlled in silicon‐doped InAs GPMs during their synthesis using shadow mask molecular beam epitaxy.
Shagorika Mukherjee +4 more
wiley +1 more source
Declaring independence from medium independence
Mind &Language, EarlyView.Computation is widely assumed to be necessarily medium independent, meaning that it is not defined in terms of any physical properties, but only by abstract automata (or something similar). I argue for two things. First, computation is not necessarily medium independent, because characterizing analog computation requires reference to physical ...
Corey J. Maley
wiley +1 more source
AN ANALYTIC APPROACH TO THE ELECTRON DRIFT VELOCITY IN GALLIUM ARSENIDE FOR DIFFERENT TEMPERATURES [PDF]
, 1969 Lisa Lundgren, K. Olsson
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