Results 31 to 40 of about 97,204 (266)

A Process for the Recovery of Gallium from Gallium Arsenide Scrap

open access: yes, 2019
The recovery of gallium (Ga) from gallium arsenide (GaAs) scrap using a leaching-ion exchange method was investigated. The ground GaAs scrap was leached, using 2.0 N nitric acid at 30 °C for 1.0 h, and the dissolution of Ga and arsenic (As) reached 98 ...
Tsai-Hsin Cheng   +3 more
semanticscholar   +1 more source

The Restructuring of Aluminum on Gallium Arsenide [PDF]

open access: yesIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1978
The restructuring of aluminum (Al) on GaAs has been observed on low-power GaAs field-effect transfers (FETs) and on special test structures. For 4 X 104heating and cooling cycles, temperature swings as low as 90°C produced restructuring. Restructuring is weakly dependent on deposition temperature, and no change in the Al resistance was observed.
Macpherson, A., Day, H.
openaire   +2 more sources

Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy

open access: yesEPJ Web of Conferences, 2013
We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics.
Zhang X.   +10 more
doaj   +1 more source

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

open access: yesE3S Web of Conferences, 2017
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta   +6 more
doaj   +1 more source

Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 × 10 6

open access: yes, 2017
Gallium arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro- and nanoscale, they allow strong interaction with quantum dots and quantum wells, and promise stunning ...
B. Guha   +12 more
semanticscholar   +1 more source

Advances in Radiative Heat Transfer: Bridging Far‐Field Fundamentals and Emerging Near‐Field Innovations

open access: yesAdvanced Functional Materials, EarlyView.
This review synthesizes the evolution of radiative heat transfer, emphasizing the transition from far‐field to near‐field regimes. Traditional frameworks, such as Planck's law, are revisited alongside modern innovations like fluctuational electrodynamics. Applications span nanoscale thermal management, energy harvesting, and thermophotovoltaic systems.
Ambali Alade Odebowale   +6 more
wiley   +1 more source

Pilot study on treatment and near zero discharge of gallium arsenide wafer processing wastewater

open access: yesGongye shui chuli
In the process of gallium arsenide wafer, a large number of toxic and harmful organic wastewater with arsenic was produced. In this paper, the process of “arsenic removal pretreatment+biochemical treatment+advanced treatment” was used to achieve the ...
LI Weichao   +8 more
doaj   +1 more source

Research of synthesis conditions and structural features of heterostructure AlXGa1-XAs/GaAs of the “desert rose” type

open access: yesApplied Surface Science Advances, 2022
In this study, we report the synthesis of the heterostructure by a simple and inexpensive electrochemical deposition method. As a result, nanocrystallites of the ''desert rose'' type were synthesized on the surface of mono-GaAs.
Yana Suchikova   +3 more
doaj  

Valence band engineering of GaAsBi for low noise avalanche photodiodes

open access: yesNature Communications, 2021
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu   +8 more
doaj   +1 more source

Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

open access: yes, 2017
The method for the formation of porous gallium arsenide in a solution of hydrochloric acid was improved. The goal of present research was to establish correlation between conditions of electrochemical etching of gallium arsenide crystals and morphology ...
Sergij Vambol   +5 more
semanticscholar   +1 more source

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