Results 31 to 40 of about 4,160 (145)

Investigation of Short Channel Effects in Al0.30Ga0.60As Channel-Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications

open access: yesJournal of Low Power Electronics and Applications
In this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) was investigated. Junctions and doping concentration gradients are unavailable in JLFET. According to the results, the suggested device has a novel architecture that
Pooja Srivastava   +4 more
doaj   +1 more source

Material Dispersion in Intrinsic GaAs for the Far-Infrared Range

open access: yesActive and Passive Electronic Components, 1998
An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
M. A. Grado-Caffaro, M. Grado-Caffaro
doaj   +1 more source

Recent Advances in Photonic Bound States in the Continuum: From Fundamentals to Engineering and Implementation

open access: yesLaser &Photonics Reviews, EarlyView.
This review summarizes recent progress in meta‐photonics with a focus on bound states in the continuum (BICs) as a powerful platform for light confinement and control. It covers fundamental concepts, design strategies across optical regimes, symmetry breaking for practical quasi‐BICs, tunable and AI‐assisted BIC devices, and emerging applications in ...
Hafiz Saad Khaliq, Hak‐Rin Kim
wiley   +1 more source

Anticariogenic Sanative Effect of Aluminum Gallium Arsenide Crystals on Hydroxyapatite Crystals

open access: yesCrystals, 2022
Dental caries is a progressive disease with varying phases of demineralization and remineralization, and the scope of reversing the carious lesion is increased if it is diagnosed before there is surface cavitation.
Sonali Sharma   +2 more
doaj   +1 more source

Pushing Efficiency Limits: SCAPS-Based Analysis of GaAs and BAs Solar Cells for Next-Generation Photovoltaics

open access: yesEast European Journal of Physics
The present study utilizes SCAPS software to simulate and analyze the semiconductor materials gallium arsenide (GaAs) and boron arsenide (BAs) for photovoltaic applications.
Merad Laarej   +2 more
doaj   +1 more source

Polarization‐Dependent Elliptical and Rectangular Mie Voids

open access: yesSmall, EarlyView.
Polarization‐dependent Mie void resonances are realized by introducing anisotropic low‐index inclusions embedded in high‐index materials. Elliptical and rectangular void geometries enable controlled tuning of resonance behavior and optical mode formation.
Serkan Arslan   +9 more
wiley   +1 more source

In Vivo Microendoscopy in the Near‐Infrared II Window

open access: yesSmall, EarlyView.
NIR‐II microendoscopy with imaging wavelength extended to 1700 nm, enabling deep intestinal imaging beyond the mucosa and transrectal imaging at cellular resolution without any invasive surgery. It facilitates visualization of the relative motion of vascular networks, lymphatic drainage, and lesions in colitis models, opening new possibilities for ...
Zhisheng Wu   +14 more
wiley   +1 more source

Gallium Nitride‐Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform

open access: yesSmall, EarlyView.
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider   +7 more
wiley   +1 more source

Intercomparison of CL31 and CL51 ceilometers and impact of installation angle on cloud base height measurement agreement

open access: yesWeather, EarlyView.
Lowest‐layer cloud base height (CBH) measurements obtained between July 2018 and December 2019 from four ceilometers at the Korea Standard Meteorological Observatory were compared to determine how ceilometer installation angle differentially affects CBH measurements.
Jaewon Kim   +3 more
wiley   +1 more source

TEM EDS analysis of epitaxially-grown self-assembled indium islands

open access: yesAIP Advances, 2017
Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM ...
Jasmine Sears   +8 more
doaj   +1 more source

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