Results 41 to 50 of about 100,205 (262)

Damage‐Free Full‐Thickness Dicing of Ultra‐Thin GaAs Wafers Using a Femtosecond Laser with Low Residual Stress

Advanced Science, EarlyView.
This study presents a femtosecond laser‐based ultrashort pulse dicing system that uses a non‐diffracting Bessel beam to shape the femtosecond laser. The use of femtosecond Bessel beam shaping and high‐speed scanning enables rapid material removal that outpaces thermal diffusion, thereby suppressing melting, minimizing the HAZ, and reducing sidewall ...
Shunshuo Cai, Yankang Ding, Minxia Ding, Qi Song, Zhe Zhang, Siwei Zhang, Kunpeng Zhang, Yu Hou, Song Yue, Haiyan Shi, Man Li, Wenrui Duan, Zichen Zhang   +12 more
wiley   +1 more source

Photoelastic coupling in gallium arsenide optomechanical disk resonators. [PDF]

Optics Express, 2014
We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive stress to be of
C. Baker, W. Hease, D. Nguyen, A. Andronico, S. Ducci, G. Leo, I. Favero   +6 more
semanticscholar   +1 more source

Wafer Scale III‐Nitride Deep‐Ultraviolet Vertical‐Cavity Surface‐Emitting Lasers Featuring Nanometer‐Class Control of Cavity Length

Advanced Science, EarlyView.
A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Chen Ji, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Ziyao Zhang, Fuyun Tan, Chengzhi Ji, Junchuan Zhang, Erfei Zhang, Xiangning Kang, Zhixin Qin, Guangxu Ju, Jiejun Wu, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen   +18 more
wiley   +1 more source

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Nature Communications, 2021
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David   +8 more
doaj   +1 more source

Determination of Band Structure of Gallium-Arsenide and Aluminium-Arsenide Using Density Functional Theory

International Conference on Compiler Construction, 2016
This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets ...
J. Owolabi, M. Onimisi, S. Abdu, G. O. Olowomofe   +3 more
semanticscholar   +1 more source

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Advanced Electronic Materials, EarlyView.
A flipped electronically reconfigurable STO/LAO freestanding membrane is demonstrated and integrated with various host platforms via controlled transfer. Using ultra‐low‐voltage electron‐beam lithography, conductive nanostructures are created at the buried STO/LAO interface. This novel approach enables heterogeneous integration of flipped complex oxide
Ruiqi Sun, Ahmed Omran, Muqing Yu, Kyoungjun Lee, Keeyong Lee, Soli Sung, Sangho Oh, Patrick irvin, Jeremy Levy, Chang‐Beom Eom   +9 more
wiley   +1 more source

THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate

Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2019
Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed.
V. N. Mishchenka
doaj  

Investigation of Short Channel Effects in Al_0.30Ga_0.60As Channel-Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications

Journal of Low Power Electronics and Applications
In this work, a cylindrical gate-all-around junctionless field effect transistor (JLFET) was investigated. Junctions and doping concentration gradients are unavailable in JLFET. According to the results, the suggested device has a novel architecture that
Pooja Srivastava, Aditi Upadhyaya, Shekhar Yadav, Chandra Mohan Singh Negi, Arvind Kumar Singh   +4 more
doaj   +1 more source

Material Dispersion in Intrinsic GaAs for the Far-Infrared Range

Active and Passive Electronic Components, 1998
An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
M. A. Grado-Caffaro, M. Grado-Caffaro
doaj   +1 more source

Electronic structure of rare earth arsenide/gallium arsenide superlattices [PDF]

Solid State Communications, 1996
We present linear-muffin-tin-orbital calculations of the energy band structure and of the density of states of semimetal-conductor superlattices made of rare earth arsenide (ErAs and YbAs) and GaAs. The effect of size quantization and the possibility of a semimetal-semiconductor transition is studied by varying the number of rare earth arsenide ...
Said M., Bertoni, C. M., Fasolino A., OSSICINI, Stefano   +3 more
openaire   +3 more sources