Results 41 to 50 of about 97,204 (266)
International Conference on Compiler Construction, 2016 This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets ...
J. Owolabi +3 more
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Photoelastic coupling in gallium arsenide optomechanical disk resonators. [PDF]
Optics Express, 2014 We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive stress to be of
C. Baker +6 more
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Advanced Functional Materials, EarlyView.Photodetectors made using perovskite single crystals in combination with free‐standing cholesteric liquid crystal (CLC) polymer films exhibit photocurrent dissymmetry factors up to 1.95 for 520 nm circularly polarized light (CPL) excitation. The CPL spectral response of the photodetector is tunable over a broad range of wavelengths by tuning the ...
Yifan Feng +9 more
wiley +1 more source
Material Dispersion in Intrinsic GaAs for the Far-Infrared Range
Active and Passive Electronic Components, 1998 An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
M. A. Grado-Caffaro, M. Grado-Caffaro
doaj +1 more source
Atmospheric Doping of Stretchable Polymer Semiconductors for Skin Electronics
Advanced Functional Materials, EarlyView.An atmospheric doping system using oxygen molecules in air as dopants is introduced for stretchable polymer semiconductors. The chemisorbed oxygen molecules act as acceptor, lead to increase not only the hole concentration of the semiconductor film over two orders of magnitude (3.37 × 1017 cm−3) but also electrical properties of the field‐effect ...
Min Woo Jeong +7 more
wiley +1 more source
Characterization of defects in gallium arsenide [PDF]
Bulletin of Materials Science, 1990 It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities. The characterization of these defects is important not only for better understanding of the solid state phenomena but also for improved reliability and performance of electronic devices.
Kumar, Vikram, Mohapatra, YN
openaire +3 more sources
Advanced Materials, EarlyView.This article summarizes significant technological advancements in materials, photonic devices, and bio‐interfaced systems, which demonstrate successful applications for impacting human healthcare via improved therapies, advanced diagnostics, and on‐skin health monitoring.
Seunghyeb Ban +5 more
wiley +1 more source
Anticariogenic Sanative Effect of Aluminum Gallium Arsenide Crystals on Hydroxyapatite Crystals
Crystals, 2022 Dental caries is a progressive disease with varying phases of demineralization and remineralization, and the scope of reversing the carious lesion is increased if it is diagnosed before there is surface cavitation.
Sonali Sharma +2 more
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Next‐Generation Image Sensors Based on Low‐Dimensional Semiconductor Materials
Advanced Materials, EarlyView.Low‐dimensional semiconductor materials are promising candidates for photosensitive components in next‐generation image sensors. This review offers a thorough and timely examination of novel image sensors, covering their working principles, intriguing materials categorized into four main groups, and advanced imaging applications.
Yunxia Hu +3 more
wiley +1 more source
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2019 Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed.
V. N. Mishchenka
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