Results 61 to 70 of about 100,205 (262)

Orbitally Driven Anomalous Thermal Transport Under High Pressure in Gallium Nitride

Rare Metals, EarlyView.
ABSTRACT Extreme conditions such as high pressure offer opportunities for innovative materials design and applications. For over a century, studies on thermal transport in crystals under high hydrostatic pressure have shown that lattice thermal conductivity generally exhibits a monotonic increase with pressure.
Zong‐Hao Yuan, Ai‐Ling Chen, Dong‐Hai Wei, Tian‐Fu Cao, Lin‐Feng Yu, Xiao‐Xia Wang, Hui‐Min Wang, Tao Ouyang, Guang‐Zhao Qin   +8 more
wiley   +1 more source

Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

Nature Communications, 2017
Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Huberet al. demonstrate that droplet-etched gallium arsenide quantum dots can emit highly indistinguishable photon pairs ...
Daniel Huber, Marcus Reindl, Yongheng Huo, Huiying Huang, Johannes S. Wildmann, Oliver G. Schmidt, Armando Rastelli, Rinaldo Trotta   +7 more
doaj   +1 more source

Engineering Grain Architecture in Epitaxial Aluminum on Miscut Substrates Toward Various Clean Limits and Giant Superconductivity Modulation

Small, EarlyView.
The miscut substrate strategy offers a novel means to engineer aluminum surface roughness, grain architecture, crystallinity, and both normal and superconducting transport properties toward their clean limits by precisely tuning the miscut angle without altering growth conditions.
Thi‐Hien Do, Pei‐Tzu Wu, Yu‐Yao Gao, Ching‐Hung Chen, Chu‐Chun Wu, Pin‐Chi Liao, Sung‐Chieh Chiu, Chia‐Wen Lu, Christos Panagopoulos, Atsushi Fujimori, Jenq‐Shinn Wu, Chi‐Te Liang, Sheng‐Di Lin, Shun‐Tsung Lo   +13 more
wiley   +1 more source

Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions

Nature Communications, 2017
Scalable and integratable sources of entangled-photon pairs are an important building block for quantum photonic applications. Here, Keilet al. demonstrate that an ensemble of droplet-etched gallium arsenide quantum dots can emit polarization-entangled ...
Robert Keil, Michael Zopf, Yan Chen, Bianca Höfer, Jiaxiang Zhang, Fei Ding, Oliver G. Schmidt   +6 more
doaj   +1 more source

Investigation of the possibility of implementing a mid-frequency broadband swept-frequency generator based on the structure of semi-insulating gallium arsenide [PDF]

Известия Саратовского университета. Новая серия: Физика
Background and Objectives: In previous works, the authors of the article reported on the prospects of creating the functional microelectronic devices with wide functionality based on the semi-insulating gallium arsenide (GaAs) structures provided that ...
Mikhailov, Aleksandr Ivanovich, Kozhevnikov, Ilya Olegovich, Mitin, Anton V.   +2 more
doaj   +1 more source

Analgesic Efficacy of Low‐Level Laser Therapy for Postoperative Endodontic Pain: A Systematic Review and Meta‐Analysis

Australian Endodontic Journal, EarlyView.
ABSTRACT This systematic review analysed the analgesic efficacy of low‐level laser therapy (LLLT) compared to conventional drug therapy and placebo for postoperative pain in endodontics. PubMed, PubMed Central, Scopus, LILACS, SciELO, Virtual Health Library, Embase and Open Gray were searched.
Gabriela Bonacina, Rafael Chies Hartmann, Maximiliano Schünke Gomes, Daiana Elisabeth Böttcher   +3 more
wiley   +1 more source

Theoretical and experimental study of plasmonic effects in heavily doped gallium arsenide and indium phosphide

, 2015
Dispersion plasmonic interaction at an interface between a doped semiconductor and a dielectric is employed to use experimental data for determining the plasma frequency, the relaxation time, the effective mass, and the mobility of free electrons in ...
M. Čada, D. Blažek, J. Pistora, K. Postava, P. Siroký   +4 more
semanticscholar   +1 more source

Comparison of different X‐ray‐based scanning electron microscopy methods to detect sub‐nanometre ultra‐thin InAs layers deposited on top of GaAs

Journal of Microscopy, EarlyView.
Abstract We compare three different methods of X‐ray analysis in a scanning electron microscope (SEM): energy‐dispersive X‐ray spectroscopy (EDX), wavelength‐dispersive X‐ray spectroscopy (WDX) and micro X‐ray fluorescence (μXRF). These methods are all applied to the same gallium arsenide (GaAs) wafer with a 0.8 nm layer of indium arsenide (InAs) on ...
Thomas Walther, Stuart Creasey‐Gray, Stephan Boehm, Heath Young, Yang Yang   +4 more
wiley   +1 more source

Looking Inside Micro- and Nano-Mechanical Pillar Resonators: A Picosecond Ultrasonics Approach

Proceedings, 2020
Pillar-shaped Gallium arsenide (GaAs) micromechanical resonators are fabricated, and the feasibility to measure the inside of the pillars in the axial direction with laser-induced GHz ultrasound based on picosecond ultrasonics is tested.
Paul Stritt, Juliane Doster, Thomas Dekorsy, Vitalyi Gusev, Eva Weig, Mike Hettich   +5 more
doaj   +1 more source

Determining bismuth content in GaAsBi alloys by energy‐dispersive X‐ray spectroscopy: A case study with multiple sets of k*‐factors for analytical transmission electron microscopy

Journal of Microscopy, EarlyView.
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley   +1 more source