Results 61 to 70 of about 4,160 (145)
Multifunctional homojunction gallium arsenide n–p–m-structure [PDF]
The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are ...
A. V. Karimov +4 more
doaj +1 more source
The natural quantization axis in quantum dots, which is usually parallel to the growth direction, is not ideal for planar photonic circuits. Here Yuan et al.
Xueyong Yuan +12 more
doaj +1 more source
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of
N. T. Humeniuk +3 more
doaj +1 more source
Mid‐Infrared Integrated Photonics: Material Platforms and Emerging Applications
Mid‐infrared (MIR) integrated photonics enables advanced chemical and biological sensing through the unique absorption features of molecules in the 2–20 µm range. This review highlights recent material advances such as chalcogenide glasses, silicon, and graphene and explores MIR applications in environmental monitoring, medical diagnostics ...
Muhammad Ali Butt +2 more
wiley +1 more source
Monolithic Saturable Absorber with Gallium Arsenide Nanowires Integrated on the Flexible Substrate for Optical Pulse Generation. [PDF]
Zhao Y +8 more
europepmc +1 more source
Scalable quantum photonics require robust realization of quantum light sources for foundry‐scale fabrication. An interferometrically coupled silicon nitride microring resonator enables post‐fabrication control of bus–ring coupling. Thermal phase shifters adjust the Q‐factor and the pair generation rate, revealing that optimal generation does not occur ...
Jan Heine +2 more
wiley +1 more source
Evaporator for thermal deposition of materials in vacuum
The design of an evaporator intended for material deposition in vacuum-coating systems is considered, which has been successfully employed in the technological process of fabricating gallium arsenide transistors, diodes, and monolithic circuits.
V. I. Bosyi +2 more
doaj
The main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in ...
Birhanu Abera, Bawoke Mekuye
doaj +1 more source
Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications. [PDF]
Paramasivam P +2 more
europepmc +1 more source
Enhanced Spectral Range of Strain‐Induced Tuning of Quantum Dots in Circular Bragg Grating Cavities
Experimental measurements and finite element simulations together reveal how stiff coating restores strain tunability in circular Bragg grating (CBG) quantum dot devices. Filling the CBG trenches with Al2O3 coating recovers up to 98% of the planar strain (εxx) while preserving cavity performance, enabling bright and tunable quantum light sources ...
Ivan Gamov +7 more
wiley +1 more source

