Results 71 to 80 of about 100,205 (262)
Effects of Near Infrared Light on Surgical Wound Healing: A Systematic Review and Meta‐Analysis
International Wound Journal, Volume 23, Issue 2, February 2026.ABSTRACT Near infrared (NIR) therapy is increasingly used to enhance postoperative wound healing, yet clinical trial results remain inconsistent. To evaluate the effectiveness of NIR therapy on postoperative wound healing and identify treatment parameters associated with optimal outcomes: This systematic review and meta‐analysis registered at PROSPERO (
Junyan Liu +5 more
wiley +1 more source
OSILATOR BERBASIS GALLIUM ARSENIDE (GaAs)
Techne, 2014 Gallium Arsenide (GaAs) merupakan bahan semikonduktor majemuk Penggunaan GaAs sebagai salahsatu bahan untuk semikonduktor sudah diteliti sejak lama, hanya saja penggunaan dan produksi semikonduktor berbahan GaAs yang ada saat ini masih sangat terbatas ...
Andreas Ardian Febrianto
doaj
Gallium arsenide whispering gallery mode resonators for terahertz photonics [PDF]
, 2023 Mallika Irene Suresh +2 more
openalex +1 more source
AIP Advances, 2017 We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline ...
Che Jin Bae +6 more
doaj +1 more source
Peak‐in‐Valley Metal Nano‐Architectures via E‐Beam‐Guided Metal Oxide Redox
Advanced Functional Materials, Volume 36, Issue 1, 2 January 2026.Focused electron beam irradiation of nanoelectrosprayed water‐ammonia films enables the synthesis of topologically complex metal nanostructures via solvent‐mediated metal/metal‐ion redox control. Low ammonia favors radiolytic oxidation, etching copper.
Auwais Ahmed, Andrei G. Fedorov
wiley +1 more source
Multifunctional homojunction gallium arsenide n–p–m-structure [PDF]
Технологія та конструювання в електронній апаратурі, 2009 The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are ...
A. V. Karimov +4 more
doaj +1 more source
Controlling the screening process of a nanoscaled space charge region by minority carriers
Nature Communications, 2016 Understanding the dynamics of bound and free charges and local electric fields on a nanometre scale are important in scanning tunnelling microscopy and nanoscale electronics. Here, the authors present a model system—a metallic tip near a gallium arsenide
Philipp Kloth +2 more
doaj +1 more source
Phase transition and elasticity of gallium arsenide under pressure
, 2014 Geometry optimization calculations were performed for some structural, elastic and mechanical properties of gallium arsenide (GaAs) under pressures up to 25 GPa.
Emre Güler, M. Güler
semanticscholar +1 more source
Advanced Materials Technologies, Volume 11, Issue 1, 8 January 2026.Scaling of 3D‐integrated electronics exacerbates thermal bottlenecks, motivating solid‐state on‐chip cooling beyond convection and immersion. This perspective reviews optical refrigeration, electroluminescent cooling, and thermoelectrics for localized, vibration‐free heat removal.
Huilong Liu +2 more
wiley +1 more source
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
IEEE Journal of the Electron Devices Society, 2018 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro +7 more
doaj +1 more source