Results 71 to 80 of about 97,204 (266)
An Asynchronous Microprocessor in Gallium Arsenide [PDF]
, 1995 In this paper, several techniques for designing asynchronous circuits in Gallium Arsenide are presented. Several new circuits were designed, to implement specific functions necessary to the design of a full microprocessor. A sense-amplifier, a completion tree, and a general circuit structure for operators specified by production rules are introduced ...
Tierno, Jose A. +3 more
openaire +3 more sources
Swarm‐Optimized ZnO/CdS/CIGS/GaAs Solar Cell for Enhanced Efficiency and Thermal Resilience
Advanced Energy and Sustainability Research, EarlyView.This article addresses the problem of optimizing the efficiency and thermal resilience of ZnO/CdS/CIGS solar cells, which are promising but still face challenges in maximizing performance under high‐temperature conditions and concentrated sunlight. The main issue is enhancing the efficiency of these cells while also ensuring that they can withstand the
Habib Ullah Manzoor +4 more
wiley +1 more source
FlexTech, EarlyView.ABSTRACT Robotic vision is essential for enabling intelligent and autonomous systems across diverse applications, including manufacturing, healthcare, autonomous navigation, and surveillance. However, conventional vision systems, which rely on rigid imaging hardware, face challenges such as limited adaptability, high energy consumption, and processing ...
Jinhong Park +4 more
wiley +1 more source
OSILATOR BERBASIS GALLIUM ARSENIDE (GaAs)
Techne, 2014 Gallium Arsenide (GaAs) merupakan bahan semikonduktor majemuk Penggunaan GaAs sebagai salahsatu bahan untuk semikonduktor sudah diteliti sejak lama, hanya saja penggunaan dan produksi semikonduktor berbahan GaAs yang ada saat ini masih sangat terbatas ...
Andreas Ardian Febrianto
doaj
AIP Advances, 2017 We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline ...
Che Jin Bae +6 more
doaj +1 more source
Journal of Raman Spectroscopy, EarlyView.A portable dual‐wavelength Raman system (exc. 785 and 1064 nm) based on a four‐channel innovative probe for safe characterisation of artworks is presented. This instrument enables non‐contact real‐time monitoring of the temperature rise and laser power modulation to prevent overheating during Raman spectroscopy, through direct emissivity and ...
D. Ciofini +7 more
wiley +1 more source
Controlling the screening process of a nanoscaled space charge region by minority carriers
Nature Communications, 2016 Understanding the dynamics of bound and free charges and local electric fields on a nanometre scale are important in scanning tunnelling microscopy and nanoscale electronics. Here, the authors present a model system—a metallic tip near a gallium arsenide
Philipp Kloth +2 more
doaj +1 more source
Laser &Photonics Reviews, EarlyView.Harnessing light–sound interaction in photonic integrated circuits can enable many classical and quantum applications on a chip. By utilizing bound states in the continuum for ultralow‐loss waveguiding, highly efficient intramodal and intermodal acousto‐optic modulation is demonstrated on an etchless lithium niobate integrated platform in the ...
Jianfeng He, Xiankai Sun
wiley +1 more source
Nature Communications, 2018 The natural quantization axis in quantum dots, which is usually parallel to the growth direction, is not ideal for planar photonic circuits. Here Yuan et al.
Xueyong Yuan +12 more
doaj +1 more source
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
IEEE Journal of the Electron Devices Society, 2018 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro +7 more
doaj +1 more source