Results 81 to 90 of about 4,160 (145)

Observation of strong nonlinear interactions in parametric down-conversion of X-rays into ultraviolet radiation

Nature Communications, 2019
Here, the authors report parametric down-conversion of X-rays into long wavelength radiation in gallium arsenide and lithium niobate crystals, with efficiencies about 4 orders of magnitude stronger than the efficiencies measured in any material studied ...
S. Sofer, O. Sefi, E. Strizhevsky, H. Aknin, S. P. Collins, G. Nisbet, B. Detlefs, Ch. J. Sahle, S. Shwartz   +8 more
doaj   +1 more source

MODELLING OF AVERAGE DRIFT SPEED OF ELECTRONS IN ONE-DIMENSIONAL STRUCTURE FROM GALLIUM ARSENIDE

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
Modeling results of average drift speed of electrons are given in one-dimensional structure from gallium arsenide. Recommendations about a choice of sizes of a temporary step and length of a spatial cell which define procedure of numerical modeling are ...
V. N. Mishchenka
doaj  

The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material. [PDF]

Micromachines (Basel), 2020
Meng J, Qi L, Liu X, Zhou J, Zhang D, Jin Z.   +5 more
europepmc   +1 more source

Gallium arsenide waveguides as a platform for direct mid-infrared vibrational spectroscopy. [PDF]

Anal Bioanal Chem, 2020
Haas J, Stach R, Kolm C, Krska R, Mizaikoff B.   +4 more
europepmc   +1 more source

RNA Sequencing Analyses Reveal the Potential Mechanism of Pulmonary Injury Induced by Gallium Arsenide Particles in Human Bronchial Epithelioid Cells. [PDF]

Sci Rep, 2020
Ouyang Y, Liu X, Li H, Cui S, Yan H, Pan X.   +5 more
europepmc   +1 more source

INTERKONEKSI IC DIGITAL BERBAHAN GALLIUM ARSENIDE (GaAs)

Techne, 2011
Tata letak keping IC Digital berbahan GaAs memerlukan interkoneksi untuk keperluan konsumsi daya dan transmisi sinyal. Interkoneksi bahan GaAs perlu perhatian khusus karena transisi dengan kecepatan tinggi akan menghasilkan derau pada interkoneksi. Derau
Andreas Ardian Febrianto
doaj  

Method of study gallium and arsenic losses in technology of gallium arsenate obtained from wastes

Moldavian Journal of the Physical Sciences, 2005
Having the goal to recover gallium (Ga) and arsenic (As) from technological wastes derived from the process of growing epitaxial gallium arsenide structures, it is proposed to extract gallium arsenate (GaAsO4) by precipitation and ...
Baranov, Serghei, Cinic, Boris, Bogdevici, Oleg, Izmailova, Dina, Redwing, J.   +4 more
doaj  

Negative longitudinal magnetoresistance in gallium arsenide quantum wells. [PDF]

Nat Commun, 2019
Xu J, Ma MK, Sultanov M, Xiao ZL, Wang YL, Jin D, Lyu YY, Zhang W, Pfeiffer LN, West KW, Baldwin KW, Shayegan M, Kwok WK.   +12 more
europepmc   +1 more source

A gallium arsenide hybrid-pixel counting detector for 100 keV cryo-electron microscopy. [PDF]

Commun Eng
Zambon P, Montemurro GV, Fernandez-Perez S, Schnyder R, Lehmann N, Sakhelashvili T, Burkhalter S, Meffert M, Jensen A, Würsch P, Jud PA, Dudina A, Kaspar S, Schulze-Briese C.   +13 more
europepmc   +1 more source

Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers. [PDF]

Chem Sci, 2019
Guo C, Zhang L, Sartin MM, Han L, Tian ZW, Tian ZQ, Zhan D.   +6 more
europepmc   +1 more source