Results 81 to 90 of about 97,204 (266)
Phase transition and elasticity of gallium arsenide under pressure
, 2014 Geometry optimization calculations were performed for some structural, elastic and mechanical properties of gallium arsenide (GaAs) under pressures up to 25 GPa.
Emre Güler, M. Güler
semanticscholar +1 more source
Tightly‐Confined and Long Z‐Cut Lithium Niobate Waveguide with Ultralow‐Loss
Laser &Photonics Reviews, EarlyView.A z‐cut lithium niobate waveguide is demonstrated with ultra‐low loss of 5.8 dB/m in a decimeter‐long LN spiral waveguide. This study is focused on Z‐cut LN waveguides with TE mode to avoid the material birefringence. Utilizing the third order nonlinearity, it is demonstrated that the first all‐normal‐dispersion coherent supercontinuum frequency comb ...
Yan Gao +5 more
wiley +1 more source
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Laser &Photonics Reviews, EarlyView.Epitaxial growth of III–V lasers on Si substrates is technologically important for numerous applications in photonics. All‐metal‐organic chemical vapor deposition (MOCVD)‐grown 1.3 µm InAs/GaAs quantum dot laser diodes are demonstrated on Si with record‐high performances in terms of threshold current density, maximum operation temperature, and device ...
Honghwi Park +4 more
wiley +1 more source
Фізика і хімія твердого тіла, 2018 The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of
N. T. Humeniuk +3 more
doaj +1 more source
Enhancing InGaN Solar Cell Performance Under Concentrated Sunlight: A SCAPS‐1D Simulation Approach
Nano Select, EarlyView.This study examines the effects of concentrated sunlight on p-In0.01Ga0.99N/p-InxGa1-xN/n-InxGa1-xN$\text{p-In}_{0.01}{\rm Ga}_{0.99}\text{N/p-InxGa1-xN/n-InxGa1-xN}$ (PPN) solar cells, analyzing five configurations with varying indium mole fractions (x = 0.1–0.5) using SCAPS‐1D software. The research shows that PPN InGaN solar cells achieve remarkable
Habib Ullah Manzoor +3 more
wiley +1 more source
Nano SelectThe main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in ...
Birhanu Abera, Bawoke Mekuye
doaj +1 more source
Monolithic Saturable Absorber with Gallium Arsenide Nanowires Integrated on the Flexible Substrate for Optical Pulse Generation. [PDF]
Micromachines (Basel), 2023 Zhao Y +7 more
europepmc +1 more source
Microwave irradiation of gallium arsenide [PDF]
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006 To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 ?? before and after long (up to 13 min) treatments in air in the operation chamber of a magnetron at the frequency 2.45 GHz and surface power density 7.5 W ...
openaire +2 more sources
physica status solidi (a), EarlyView.The study presents high‐speed vertical III–V nanowire transistors with optimized gate resistance for reduced noise. Analysis and benchmarking of sputtered tungsten gate metal reveals stress variations, enhancing process reliability. A two‐step layout redesign first improves device reliability followed by performance, demonstrated through distributed ...
Marcus E. Sandberg +3 more
wiley +1 more source
Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications. [PDF]
Nanomaterials (Basel), 2023 Paramasivam P +2 more
europepmc +1 more source