Results 81 to 90 of about 100,205 (262)

Group Delay Dispersion Measurements on Mid‐Infrared Supermirrors

open access: yesAdvanced Optical Materials, Volume 14, Issue 3, 19 January 2026.
Group delay dispersion of novel semiconductor‐based optics is measured in the mid‐infrared spectral range (2.5 to 4.8 μm$\rm \umu{\rm m}$). Comparisons are made between simulations, measurements conducted with a home‐built white light interferometer, and measurements performed with a commercially available FTIR.
Ulrich Galander   +3 more
wiley   +1 more source

Monolithic Saturable Absorber with Gallium Arsenide Nanowires Integrated on the Flexible Substrate for Optical Pulse Generation. [PDF]

open access: yesMicromachines (Basel), 2023
Zhao Y   +8 more
europepmc   +1 more source

A Near Infrared Emission Feature from Visible Fluorescence Tails and its Correlation with Singlet Oxygen

open access: yesAdvanced Optical Materials, Volume 14, Issue 2, 14 January 2026.
A persistant NIR emission tail and feature at 923 nm is observed during photochemical singlet oxygen generation using various photosensitizers. While initially considered as singlet oxygen phosphorescence we show that it arises from the NIR‐tail of (visible) photosensitizer emission and the non‐linear increase of detector sensitivity.
Bjoern F. Hill   +7 more
wiley   +1 more source

Evaporator for thermal deposition of materials in vacuum

open access: yesТехнологія та конструювання в електронній апаратурі, 2008
The design of an evaporator intended for material deposition in vacuum-coating systems is considered, which has been successfully employed in the technological process of fabricating gallium arsenide transistors, diodes, and monolithic circuits.
V. I. Bosyi   +2 more
doaj  

Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics

open access: yesNature Communications, 2018
The natural quantization axis in quantum dots, which is usually parallel to the growth direction, is not ideal for planar photonic circuits. Here Yuan et al.
Xueyong Yuan   +12 more
doaj   +1 more source

Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit

open access: yesФізика і хімія твердого тіла, 2018
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of
N. T. Humeniuk   +3 more
doaj   +1 more source

Boosting the Performance of Epitaxial Perovskite Microstructures by Surface Passivation

open access: yesAdvanced Optical Materials, Volume 14, Issue 1, 9 January 2026.
Surface passivation is applied to epitaxial perovskite structures. Improvements are obtained in respect to luminescence intensity and decay time, as well in respect to photodetection and lasing. Highlight results include photoluminescence transients that are limited only by carrier diffusion and a record low laser threshold for microcrystal‐based ...
Shuyu Zhou   +19 more
wiley   +1 more source

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

open access: yesNano Select
The main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in ...
Birhanu Abera, Bawoke Mekuye
doaj   +1 more source

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