Results 11 to 20 of about 1,638,771 (254)
IET Optoelectronics, 2021 Two different device structures are numerically studied, and their optoelectronic characteristics with standard structure are compared. The authors minimized the uneven carrier distribution across the active region. By replacing the first quantum barrier
Muhammad Usman +3 more
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Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2021 The article discusses the possibility of regulating the properties of diffusion-hardening solder based on low-melted gallium-tin, gallium-indium-tin, gallium-tin-zinc alloys and a solid component consisting of a copper-tin alloy powder by introducing a ...
V.М. Skachkov +3 more
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Parallel connected GaN E‐HEMT VSI‐based servo drives for PMSMs
IET Electric Power Applications, 2022 The operation of parallel‐connected servo drives has the advantages of increasing the torque (hence the power) capacity, reliability, redundancy and modularity.
Huseyin Yuruk, Ozan Keysan
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900 V GaN-based sine-wave inverters for three-phase industrial applications
The Journal of Engineering, 2019 GaN devices are gradually getting attention within the industry along with SiC as a potential wide bandgap device. At present, there are almost no high-voltage GaN devices with voltage >650 V, which makes an inverter design difficult for a three-phase ...
Nilanjan Mukherjee +3 more
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IET Circuits, Devices and Systems, 2023 This paper presents simulation and measurement results of a 2–4 GHz octave bandwidth interference suppression circuit. The circuit accomplishes the function of a tunable frequency notch through an interferometer architecture.
Megan C. Robinson +2 more
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Mechanochemical synthesis of intermetallic compounds in the system gallium – ruthenium
Chimica Techno Acta, 2021 The interaction of a solid inert metal Ru with liquid active metal Ga during mechanical activation in a high-energy planetary ball mill was studied using the X-ray diffraction and the high resolution scanning electron microscopy with energy dispersive X ...
T. F. Grigoreva +3 more
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Acta Crystallographica Section E: Crystallographic Communications, 2017 The crystal structures of hydrothermally synthesized silver(I) aluminium bis[hydrogen arsenate(V)], AgAl(HAsO4)2, silver(I) gallium bis[hydrogen arsenate(V)], AgGa(HAsO4)2, silver gallium diarsenate(V), AgGaAs2O7, and sodium gallium diarsenate(V ...
Karolina Schwendtner, Uwe Kolitsch
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Thio-, seleno- and telluro-ether complexes of aluminium(iii) halides: synthesis, structures and properties [PDF]
, 2014 The reaction of AlCl3 with Me2E (E = S, Se or Te) or nBu2E (E = Se or Te) in CH2Cl2 under rigorously anhydrous conditions gave the pseudo-tetrahedral complexes [AlCl3(R2E)].
Levason W +11 more
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Gallium compounds in nuclear medicine and oncology
Main Group Metal Chemistry, 2014 An overview of the most important gallium compounds in nuclear medicine and oncology in the two last decades, with an emphasis on the last decade (especially the last 5 years), is given in this review.
Mikuš Peter +4 more
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Тонкие химические технологии, 2017 Trivalent gallium compounds are structural analogs of the elements with variable valency in (+3) oxidation state that can be used as cathode materials for electrochemical power devices (iron, vanadium, chromium).
V. Yu. Proydakova +3 more
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