Results 51 to 60 of about 1,638,771 (254)

Entropy‐Driven Design of Low‐Melting‐Point Alloys via Compositionally Complex Strategy

open access: yesAdvanced Engineering Materials, EarlyView.
Conventional low‐melting‐point alloys (LMPAs) are limited by a narrow compositional space and inherent property trade‐offs. This review presents an entropy‐driven design strategy that overcomes these limitations, ushering in a new class of low‐melting‐point compositionally complex alloys (LMCCAs).
Yinghui Shang   +6 more
wiley   +1 more source

Antimicrobial Activity of Gallium(III) Compounds: Pathogen-Dependent Targeting of Multiple Iron/Heme-Dependent Biological Processes

open access: yesCurrent Issues in Molecular Biology
Metals play vital roles in biological systems, with iron/heme being essential for cellular and metabolic functions necessary for survival and/or virulence in many bacterial pathogens.
Seoung-ryoung Choi   +3 more
doaj   +1 more source

Gallium Microalloying in Bi–Sn Solders: Interfacial Phase Formation, Wettability, and Long‐Term Shear Reliability Under Isothermal Aging

open access: yesAdvanced Engineering Materials, EarlyView.
Gallium microalloying redirects interfacial reactions in low‐temperature Bi–Sn solders from Cu–Sn toward Cu–Ga intermetallic formation. The resulting Cu–Ga layer suppresses intermetallic growth during thermal aging, alters fracture pathways, and improves interfacial stability.
Iva Králová   +6 more
wiley   +1 more source

Virtual prototype and GaN HEMT based high frequency LLC converter design

open access: yesThe Journal of Engineering, 2019
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) with the merits of the fast switch speed, low on resistance and low switch loss is applicable to high-frequency LLC converters.
Long Xiao   +4 more
doaj   +1 more source

Recovery of Gallium from Smartphones—Part II: Oxidative Alkaline Pressure Leaching of Gallium from Pyrolysis Residue

open access: yesMetals, 2020
In this article, we examine the selective hydrometallurgical extraction of gallium from pyrolyzed smartphones. Gallium-enriched pyrolysis residue originating from pyrolyzed smartphones was leached using NaOH and gaseous oxygen at elevated temperatures ...
Benedikt Flerus, Bernd Friedrich
doaj   +1 more source

Morphology, Transport, and Dynamics of Protein Adsorption in Open‐Cell Metal Foam

open access: yesAdvanced Engineering Materials, EarlyView.
Stainless steel (SS) open‐cell foams are shown to adsorb more protein per unit area than previously reported 316L SS and chromium oxide surfaces under static and flow conditions. An integrated approach combining 3D pore imaging, flow simulation, and protein adsorption experiments characterizes the foam’s performance.
Chinmaya Prerana Inguva   +2 more
wiley   +1 more source

A 99%-efficiency GaN converter for 6.78 MHz magnetic resonant wireless power transfer system

open access: yesThe Journal of Engineering, 2014
The authors developed a high-efficiency gallium-nitride (GaN) Class-E converter for a 6.78 MHz magnetic resonant wireless power transfer system. A negative-bias gate driver circuit made it possible to use a depletion mode GaN high-electron-mobility ...
Yoshiyuki Akuzawa   +3 more
doaj   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

open access: yesAdvanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein   +4 more
wiley   +1 more source

Three-level GaN inverter with SiC diodes for a possible three-phase high power solution

open access: yesThe Journal of Engineering, 2019
GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters ...
F. Aguilar Vega   +4 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Home - About - Disclaimer - Privacy