Results 51 to 60 of about 9,491 (255)
Virtual prototype and GaN HEMT based high frequency LLC converter design
The Journal of Engineering, 2019 Gallium nitride (GaN) high-electron-mobility transistor (HEMT) with the merits of the fast switch speed, low on resistance and low switch loss is applicable to high-frequency LLC converters.
Long Xiao +4 more
doaj +1 more source
Metals, 2020 In this article, we examine the selective hydrometallurgical extraction of gallium from pyrolyzed smartphones. Gallium-enriched pyrolysis residue originating from pyrolyzed smartphones was leached using NaOH and gaseous oxygen at elevated temperatures ...
Benedikt Flerus, Bernd Friedrich
doaj +1 more source
Fatigue Crack Initiation and Growth in Nanocrystalline Ni at Multiple Length‐Scales
Advanced Engineering Materials, EarlyView.Overview of miniaturized in situ SEM fatigue setup and resultant fatigue crack growth data for nanocrystalline Ni. The presented study focuses on the analysis of fatigue crack growth rate (FCGR) in focused ion beam‐notched microcantilevers prepared from nanocrystalline (NC) Ni as a model material.
Igor Moravcik +7 more
wiley +1 more source
A 99%-efficiency GaN converter for 6.78 MHz magnetic resonant wireless power transfer system
The Journal of Engineering, 2014 The authors developed a high-efficiency gallium-nitride (GaN) Class-E converter for a 6.78 MHz magnetic resonant wireless power transfer system. A negative-bias gate driver circuit made it possible to use a depletion mode GaN high-electron-mobility ...
Yoshiyuki Akuzawa +3 more
doaj +1 more source
Tailoring Functional Properties of Ti–Ni–Cu Shape Memory Alloy Thin Films for MEMS Actuators
Advanced Engineering Materials, EarlyView.A comprehensive study of critical parameters required to develop well‐performing Ti–Ni–Cu thin film shape memory alloy microactuators is provided. Materials science and device integration aspects are integrated by addressing structural and physical relationships using complementary characterization techniques as well as a practical fabrication solution
Elaheh Akbarnejad +6 more
wiley +1 more source
Three-level GaN inverter with SiC diodes for a possible three-phase high power solution
The Journal of Engineering, 2019 GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters ...
F. Aguilar Vega +4 more
doaj +1 more source
Advanced Engineering Materials, EarlyView.A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič +7 more
wiley +1 more source
The Journal of Engineering, 2019 This study proposes an implementation based on a low-cost field-programmable gate array (FPGA) of a high-resolution pulse width modulation applied on a single-phase power factor correction (PFC) converter operating with 2 MHz switch frequency.
José Augusto Arbugeri +2 more
doaj +1 more source
Advanced Engineering Materials, EarlyView.Low‐voltage FIB‐SEM tomography combined with a image preprocessing pipeline improves phase contrast and enables reliable machine‐learning segmentation of conductive networks in lithium‐ion battery electrodes. Structural descriptors are extracted from segmented images, done semimanually and automated, and compared.
Lisa Beran +6 more
wiley +1 more source
GaN-based single-phase bridgeless PFC boost rectifier
The Journal of Engineering, 2019 A single-phase GaN-based bridgeless PFC Boost converter design is proposed regarding multi-domain optimisation concepts. A design guideline describing elements losses are presented concerning the selected power converter topology.
Tiago Kommers Jappe +2 more
doaj +1 more source