Results 1 to 10 of about 314,826 (217)
In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication [PDF]
Micromachines, 2023 In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 ...
Yannan Yang +12 more
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Crystals, 2023 Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from ...
Nathan Stoddard, Siddha Pimputkar
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Observation of 2D-magnesium-intercalated gallium nitride superlattices. [PDF]
NatureSince the demonstration of p-type gallium nitride (GaN) through doping with substitutional magnesium (Mg) atoms1,2, rapid and comprehensive developments, such as blue light-emitting diodes, have considerably shaped our modern lives and contributed to a ...
Wang J +12 more
europepmc +2 more sources
Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives
Energies, 2023 High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced,
Salvatore Musumeci, Vincenzo Barba
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Photonics with Gallium Nitride Nanowires. [PDF]
Materials (Basel), 2022 The surface plasmon resonance in low-dimensional semiconducting materials is a source of valuable scientific phenomenon which opens widespread prospects for novel applications. A systematic study to shed light on the propagation of plasmons at the interface of GaN nanowire is reported.
Alwadai N +4 more
europepmc +3 more sources
High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy [PDF]
Nature CommunicationsGallium-nitride high-electron-mobility-transistor is an industrial leading contender for high-frequency and high-power radio-frequency applications. However, the record output-power-density has remained stagnant for nearly two decades, limited by high ...
Hong Zhou +25 more
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Energies, 2019 This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due
Mauricio Dalla Vecchia +3 more
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APL Photonics, 2017 We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant ...
Mohamed Sabry Mohamed +8 more
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Gallium Nitride Semiconductor Resonant Tunneling Transistor [PDF]
Advanced ScienceSemiconductor devices based on quantum tunneling hold immense promise for developing multi‐valued logic, memory, and oscillators. Recently, two‐terminal gallium nitride (GaN) resonant tunneling diodes (RTDs) have been extensively studied due to their ...
Fang Liu +15 more
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Gallium Nitride Power Devices: A State of the Art Review
IEEE Access, 2023 Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities.
A. Udabe +2 more
semanticscholar +1 more source