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Thermal conductivity of wurtzite gallium nitride
Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2022 This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity.
V. S. Volcheck +2 more
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Journal of Physics: Conference Series, 2023 The advancement in technology in semiconductor materials significantly contributed in improvement of human life by bringing breakthrough in fabrication of optoelectronics and power devices which have wide applications in medicine and communication.
R. Sharma +5 more
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Electronics Letters, 2021 Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved.
Jian Li +4 more
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The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride) [PDF]
E3S Web of Conferences, 2020 Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity.
Yuanlong Chen
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On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals
Crystals, 2022 The results of basic ammonothermal crystallization of gallium nitride are described. The material is mainly analyzed in terms of the formation of stress (called stress-induced polarization effect) and defects (threading dislocations) appearing due to a ...
Karolina Grabianska +6 more
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Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Micro, 2022 Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices.
F. Roccaforte, F. Giannazzo, G. Greco
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Materials, 2022 High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the
R. Lo Nigro +4 more
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Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
AIP Advances, 2021 Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 μm thick silicon (001) and 10 μm thick 3C-silicon carbide (001), grown on 500 μm silicon (001), were used as substrates and structured ...
F. Meier +6 more
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Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review
Coatings, 2022 Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc.
Omar Al-Zuhairi +8 more
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Integrated Gallium Nitride Nonlinear Photonics [PDF]
Laser & Photonics reviews, 2020 Gallium nitride (GaN) as a wide bandgap material is widely used in solid‐state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN‐on‐insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite
Yanzhen Zheng +9 more
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