Results 21 to 30 of about 314,945 (334)
Preparation and Performance of Gallium Nitride Powders with Preferred Orientation
MATEC Web of Conferences, 2018 The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K).
Kang Liping +4 more
doaj +2 more sources
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2021 The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride ...
V. S. Volcheck, V. R. Stempitsky
doaj +1 more source
Study of Elastic properties of Gallium Nitride doped Ferrite-Polypyrrole Nanocomposites [PDF]
EPJ Web of ConferencesThe present communication aims to investigate the influence of ferrite substitution in Gallium Nitride and Polypyrrole substitution in Gallium nitride ferrite nano composites. The interpretation was done by studying Infrared spectroscopy.
Indrakanti Rajani +2 more
doaj +1 more source
Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5%
Communications Materials, 2023 Although alpha-voltaic cells have shown great potential in unattended miniaturized systems for compact, long-lifetime and independence of external energy input, the power conversion efficiency of state-of the-art alpha-voltaic cells is still much lower ...
Runlong Gao +11 more
doaj +1 more source
Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride [PDF]
, 1998 High pressure chemistry has traditionally involved applying pressure and increasing temperature until conditions become thermodynamically favorable for phase transitions or reactions to occur.
Heath, James R. +6 more
core +1 more source
Results in Physics, 2019 In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam
Ho Xin Jing +4 more
doaj +1 more source
Quantum random number generator based on single-photon emitter in gallium nitride. [PDF]
Optics Letters, 2020 We experimentally demonstrate a real-time quantum random number generator by using a room-temperature single-photon emitter from the defect in a commercial gallium nitride wafer.
Qing Luo +7 more
semanticscholar +1 more source
Native defects in gallium nitride [PDF]
Physical Review B, 1995 The results of an extensive theoretical study of native defects in hexagonal GaN are presented. We have considered cation and anion vacancies, antisites, and interstitials. The computations were carried out using ab initio molecular dynamics in supercells containing 72 atoms.
, Boguslawski, , Briggs, , Bernholc
openaire +2 more sources
Unravelling the secrets of the resistance of GaN to strongly ionising radiation
Communications Physics, 2021 Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation.
Miguel C. Sequeira +11 more
doaj +1 more source
A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
core +1 more source