Results 41 to 50 of about 314,945 (334)
On impact ionization and avalanche in gallium nitride
Applied Physics Letters, 2020 This paper is dedicated to discussing the physics and applications of avalanche on III-Nitrides, primarily using Gallium Nitride as the example. Understanding the breakdown phenomenon in wide bandgap materials is of great interest to the device and ...
D. Ji, S. Chowdhury
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A polarization-induced 2D hole gas in undoped gallium nitride quantum wells [PDF]
Science, 2018 A hole flatland When two distinct materials are placed on top of each other, the difference in polarization between the two layers can induce charge carriers at the interface.
R. Chaudhuri +5 more
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UV LED System for PL Measurements on GaN Samples [PDF]
, 2019 Gallium Nitride materials are direct bandgap semiconductors with important applications, such as in the production of light-emitting diodes and transistors.
Pantova, Dona H
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Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor
, 2015 Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low ...
Amirthapandian, S. +4 more
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A review of gallium nitride power device and its applications in motor drive
CES Transactions on Electrical Machines and Systems, 2019 Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high electron mobility and low dielectric constant. Compared with traditional Si devices, these advantages make it suitable for fast-switching and high-power-density power ...
Xiaofeng Ding, Yang Zhou, Jiawei Cheng
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Advanced Functional Materials, EarlyView.Herein presented supraparticles combine the nanoparticulate photocatalyst graphitic carbon nitride with the enzyme horseradish peroxidase, which is immobilized on silica nanoparticles. In an optimized compatibility range, both catalysts operate effectively within the hybrid supraparticles and catalyze a cascade reaction consisting of the photocatalytic
Bettina Herbig +11 more
wiley +1 more source
Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices
Journal of Low Power Electronics and Applications, 2021 The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
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The Logics of Materials Innovation The Case of Gallium Nitride and Blue Light Emitting Diodes [PDF]
, 2012 International audienceThis article examines the rise of gallium nitride as a major semiconductor material at the center of a new industry, solid-state lighting.
Lécuyer, Christophe, Ueyama, Takahiro
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Lithium Intercalation in the Anisotropic Van Der Waals Semiconductor CrSBr
Advanced Functional Materials, EarlyView.We report the lithium intercalation in the layered van der Waals crystal CrSBr, revealing strongly anisotropic ion‐migration dynamics. Optical and electrical characterization of exfoliated CrSBr shows lithium diffusion coefficients that differ by more than an order of magnitude along a‐ and b‐directions, consistent with molecular dynamics simulations ...
Kseniia Mosina +13 more
wiley +1 more source
Фізика і хімія твердого тіла, 2018 The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of
N. T. Humeniuk +3 more
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