Results 91 to 100 of about 18,669 (218)

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 3, March 2026.
Vacancies in low‐dose ion‐implanted GaN are studied by positron annihilation. Depth profiles of the net donor concentration (ND) are close to those for implanted impurities, but ND is 2–3 times higher than concentrations of implanted ions. The origin of donor‐like defects is expected to be N‐vacancy‐related defects, and Ga‐vacancy‐type defects play a ...
Akira Uedono, Hiroko Iguchi, Masahiro Horita, Jun Suda, Kohei Shima, Shigefusa F. Chichibu, Shoji Ishibashi   +6 more
wiley   +1 more source

MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation

Applied Physics Express
This work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process.
Reet Chaudhuri, Kyle Bothe, Antonio Lucero, Austin Hickman, Shankar Miller-Murthy, Debdeep Jena, Huili Grace Xing, Ko-Tao Lee   +7 more
doaj   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source

Optimal Selection and Experimental Verification of Wide-Bandgap Semiconductor for Betavoltaic Battery

Nanomaterials
Wide-bandgap semiconductor betavoltaic batteries have a promising prospect in Micro-Electro-Mechanical Systems for high power density and long working life, but their material selection is still controversial.
Jiachen Zhang, Kunlun Lv, Yuan Yin, Yuqian Gao, Ye Tian, Yuncheng Han, Jun Tang   +6 more
doaj   +1 more source

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling

Small, Volume 22, Issue 17, 20 March 2026.
AI‐enabled semiconductor scaling law. Virtualization emerges as an AI‐enabled scaling law for semiconductors, where progress depends on replacing physical iteration with credible virtual evidence. Surrogate modeling accelerates design‐space exploration, digital twins virtualize process learning, and defect‐to‐reliability inference advances ...
Zeheng Wang, Xinghuan Chen, Fanfan Lin, Xinze Li, Fangzhou Wang, Songnan Guo, Simin Yu, Liang Li, Jing‐Kai Huang   +8 more
wiley   +1 more source

Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs

IEEE Journal of the Electron Devices Society
In this work, we investigate the field and temperature dependence of the electron mobility in aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) realized on GaN-on-silicon (Si) substrates.
Ran Zhou, D. J. Gravesteijn, R. J. E. Hueting   +2 more
doaj   +1 more source

Self‐Lubricating and Surface‐State‐Modulated p‐p Heterojunction for Robust In Situ Sensing and Deep Learning‐Enabled Condition Identification

SmartSys, Volume 2, Issue 1, March 2026.
ABSTRACT The rapid expansion of Internet of things (IoT) and cyber‐physical systems presents a formidable challenge for sustainably powering massive numbers of distributed sensors. Friction, a ubiquitous phenomenon typically viewed as a source of energy dissipation, offers a novel avenue for energy harvesting and in situ sensing.
Song Wang, Xiantao Zhang, Hongjie Zhang, Shuai Gao, Xueping Xu, Qinkai Han, Shaoze Yan   +6 more
wiley   +1 more source

Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications

Crystals, 2019
Gallium nitride (GaN) materials with a high chemical stability and biocompatibility are well suited for bio-sensing applications and evanescent wave spectroscopy.
Yu-Li Hsieh, Wen-Shao Chen, Liann-Be Chang, Lee Chow, Samuel Borges, Alfons Schulte, Shiang-Fu Huang, Ming-Jer Jeng, Chih-Jen Yu   +8 more
doaj   +1 more source

The Electrical Properties of Al, ga1-Xn Thin Films Deposited on Si(111) Substrate by Chemical Solution Deposition Method [PDF]

AlxGa1-xN thin films with the GaN buffer layer was deposited on Si(111) substrate by chemical solution deposition (CSD) method. The objective of this research was to evaluate the electrical properties of AlxGa1-xN with variation of Al mole fraction ...
Hadiyanto, Hadiyanto, Istadi, I., Nurhasanah, Iis, Sutanto, Heri   +3 more
core  

Gallium Nitride (GaN) Nanostructures and Their Gas Sensing Properties: A Review. [PDF]

Sensors (Basel), 2020
Khan MAH, Rao MV.
europepmc   +1 more source