Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]
Micromachines (Basel)Chuang YT, Tumilty N, Wu TL.
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Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]
ACS Appl Electron MaterKim DW +10 more
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Native GaN/GaO<sub>x</sub> Heterostructure Platform for Wafer-Scale Integration of High-Performance Complementary Transistors. [PDF]
Research (Wash D C)Liang J +7 more
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Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]
Micromachines (Basel)Chuang YT, Tumilty N.
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Gallium Nitride for Space Photovoltaics: Properties, Synthesis Methods, Device Architectures and Emerging Market Perspectives. [PDF]
Micromachines (Basel)Drabczyk A +9 more
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Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications. [PDF]
Light Sci ApplGao X, Huang Y, Wang R, Sun Y, Wang L.
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Synthesis, Characterization, and Electrochemical Behavior of Layered Vanadium Nitride MXene. [PDF]
ACS NanoNgozichukwu B +4 more
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Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
ACS OmegaOmar A, Loan SA.
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Dipolar modulation of surface states in GaN via molecular ionization energy. [PDF]
Sci RepChaulker OH +4 more
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Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT. [PDF]
Micromachines (Basel)Baca-Arroyo R.
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