Results 1 to 10 of about 1,088,192 (320)
(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer [PDF]
, 2007 Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process ...
Bejtka, K. +9 more
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Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures [PDF]
physica status solidi (a), 2012 AbstractWe report the effect of a thin GaN (2 nm) interlayer on the magnetotransport properties of AlInN/AlN/GaN‐based heterostructures. Two samples were prepared (Sample A: AlInN/AlN/GaN and sample B: AlInN/GaN/AlN/GaN). Van der Pauw and Hall measurements were performed in the 1.9–300 K temperature range. While the Hall mobilities were similar at room
Bayrakli, A. +6 more
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DC-DC Converter Design Issues for High-Efficient DC Microgrid
Communications, 2019 In this article, the electrical properties, as well as the economic aspects of the modular and non-modular solution of the DC-DC photovoltaic converter for DC microgrid subsystem, are described.
Michal Frivaldsky, Jan Morgos
doaj +1 more source
Active Damping in Series Connected Power Modules with Continuous Output Voltage
Power Electronics and Drives, 2021 This paper presents a modular and scalable power electronics concept for motor control with continuous output voltage. In contrast to multilevel concepts, modules with continuous output voltage are connected in series.
Ulmer Sabrina +2 more
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Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 2004 Thick GaN layers as well as AlGaN/GaN and AlN/GaN heterostructures grown by metalorganic vapor phase epitaxy have been photoelectrochemically (PEC) etched in various dilute electrolytes, and bandgap-selective etching has been demonstrated in heterostructures.
C. L. Reynolds +6 more
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IEEE Transactions on Pattern Analysis and Machine Intelligence, 2023 papers on generative modeling: https://github.com/zhoubolei/awesome-generative-modeling awesome gan-inversion papers: https://github.com/weihaox/awesome-gan ...
Weihao Xia +5 more
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Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots
, 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots.
Alexander A. Balandin +8 more
core +1 more source
Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates [PDF]
, 2008 Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies.
Martin, R.W. +5 more
core +1 more source
BiVi-GAN: Bivariate Vibration GAN
SensorsIn the domain of prognosis and health management (PHM) for rotating machinery, the criticality of ensuring equipment reliability cannot be overstated. With developments in artificial intelligence (AI) and deep learning, there have been numerous attempts to use those methodologies in PHM.
HoeJun Jeong +3 more
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Optics Express, 2013 The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui +9 more
openaire +2 more sources