Results 31 to 40 of about 1,088,192 (320)

Deep Fake Image Detection Based on Pairwise Learning

open access: yesApplied Sciences, 2020
Generative adversarial networks (GANs) can be used to generate a photo-realistic image from a low-dimension random noise. Such a synthesized (fake) image with inappropriate content can be used on social media networks, which can cause severe problems ...
Chih-Chung Hsu   +2 more
doaj   +1 more source

Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas

open access: yesNanophotonics, 2023
The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet.
Meunier Max   +7 more
doaj   +1 more source

Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques [PDF]

open access: yes, 2019
The polarization fields and electro-optical response of PIN-diodes based on nearly lattice-matched InGaN/GaN and InAlN/GaN double heterostructure quantum wells grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy were experimentally ...
Papadimitriou, Dimitra N.
core   +1 more source

GAN Compression: Efficient Architectures for Interactive Conditional GANs [PDF]

open access: yesIEEE Transactions on Pattern Analysis and Machine Intelligence, 2020
Conditional Generative Adversarial Networks (cGANs) have enabled controllable image synthesis for many vision and graphics applications. However, recent cGANs are 1-2 orders of magnitude more compute-intensive than modern recognition CNNs. For example, GauGAN consumes 281G MACs per image, compared to 0.44G MACs for MobileNet-v3, making it difficult for
Muyang Li   +5 more
openaire   +6 more sources

First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN [PDF]

open access: yes, 2006
First principles phase diagram calculations were performed for the wurtzite-structure quasibinary systems AlN–GaN, GaN–InN, and AlN–InN. Cluster expansion Hamiltonians that excluded, and included, excess vibrational contributions to the free energy, Fvib,
Burton, B. P.   +2 more
core   +1 more source

Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates [PDF]

open access: yes, 2005
When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN ...
Dawson, M.D.   +5 more
core   +1 more source

Structured GANs

open access: yes2018 IEEE Winter Conference on Applications of Computer Vision (WACV), 2018
We present Generative Adversarial Networks (GANs), in which the symmetric property of the generated images is controlled. This is obtained through the generator network's architecture, while the training procedure and the loss remain the same. The symmetric GANs are applied to face image synthesis in order to generate novel faces with a varying amount ...
Peleg, Irad, Wolf, Lior
openaire   +2 more sources

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

open access: yesMicromachines, 2019
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.
Idriss Abid   +7 more
doaj   +1 more source

Mass Transfer of Microscale Light-Emitting Diodes to Unusual Substrates by Spontaneously Formed Vertical Tethers During Chemical Lift-Off

open access: yesApplied Sciences, 2019
A much simplified method for transferring Gallium nitride (GaN) light emitting didoes (LEDs) to an unusual substrate, such as glass, Si, polyethylene terephthalate, or polyurethane, was demonstrated with spontaneously formed vertical tethers during ...
Ja-Yeon Kim   +4 more
doaj   +1 more source

Deep Residual Network for High-Resolution Background Matting [PDF]

open access: yesRevista Română de Informatică și Automatică, 2021
Image matting is one of the most important tasks in the computer vision community whose popularity has increased in recent years. This is a highly critical method in video and image editing applications, which involves the separation of the foreground ...
Said EL ABDELLAOUI, Ilham KACHBAL
doaj   +1 more source

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