Results 31 to 40 of about 1,158,498 (310)

First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN [PDF]

, 2006
First principles phase diagram calculations were performed for the wurtzite-structure quasibinary systems AlN–GaN, GaN–InN, and AlN–InN. Cluster expansion Hamiltonians that excluded, and included, excess vibrational contributions to the free energy, Fvib,
Burton, B. P., Kattner, U., van de Walle, A.   +2 more
core   +1 more source

GAN Cocktail: Mixing GANs Without Dataset Access

, 2022
Today's generative models are capable of synthesizing high-fidelity images, but each model specializes on a specific target domain. This raises the need for model merging: combining two or more pretrained generative models into a single unified one. In this work we tackle the problem of model merging, given two constraints that often come up in the ...
Avrahami, Omri, Lischinski, Dani, Fried, Ohad   +2 more
openaire   +2 more sources

Mass Transfer of Microscale Light-Emitting Diodes to Unusual Substrates by Spontaneously Formed Vertical Tethers During Chemical Lift-Off

Applied Sciences, 2019
A much simplified method for transferring Gallium nitride (GaN) light emitting didoes (LEDs) to an unusual substrate, such as glass, Si, polyethylene terephthalate, or polyurethane, was demonstrated with spontaneously formed vertical tethers during ...
Ja-Yeon Kim, Yoo-Hyun Cho, Hyun-Sun Park, Jae-Hyun Ryou, Min-Ki Kwon   +4 more
doaj   +1 more source

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines, 2019
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub   +7 more
doaj   +1 more source

Detection and localization enhancement for satellite images with small forgeries using modified GAN-based CNN structure

IJAIN (International Journal of Advances in Intelligent Informatics), 2020
The image forgery process can be simply defined as inserting some objects of different sizes to vanish some structures or scenes. Satellite images can be forged in many ways, such as copy-paste, copy-move, and splicing processes.
Mohamed Mahmoud Fouad, Eslam Magdy Mostafa, Mohamed Abdelmoneim Elshafey   +2 more
doaj   +1 more source

Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy [PDF]

, 1999
We have studied molecular beam epitaxy grown GaN films of both polarities using electric force microscopy to detect sub 1 µm regions of charge density variations associated with GaN extended defects.
Bandić, Z. Z., Bridger, P. M., McGill, T. C., Piquette, E. C.   +3 more
core   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Optics Express, 2013
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H., Tan, S.T., Liu W., Ju, Z., Zheng, K., Kyaw, Z., Ji, Y., Hasanov, N., Sun X.W., Demir, H. V.   +9 more
openaire   +5 more sources

Application of Transformer in anomaly indicators forecasting of hydropower units

Zhejiang dianli, 2023
The workloads of routine repair， maintenance， and abnormality detection of hydropower units are heavy. Therefore， traditional manual monitoring may leave out or misjudge abnormalities.
LIN Yemin, WANG Ning, QIU Rongjie, TANG Yuchao, ZHOU Guanqun, LI Zezhou, WANG Zhongya   +6 more
doaj   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

Optics Express, 2013
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan   +9 more
openaire   +2 more sources

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

Optics Express, 2014
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work.
Kyaw, Z., Zhang, Z.-H., Liu W., Tan, S.T., Ju, Z.G., Zhang X.L., Ji, Y., Hasanov, N., Zhu, B., Lu, S., Zhang, Y., Sun X.W., Demir, H. V.   +12 more
openaire   +6 more sources