Results 31 to 40 of about 1,260,916 (317)

Growth of GaN on porous SiC and GaN substrates [PDF]

Journal of Electronic Materials, 2003
GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD) to evaluate possible advantage of epitaxy on a porous substrate. For the growth of GaN on porous SiC by PAMBE, transmission electron microscopy (TEM) observations indicate that the exposed ...
Ashutosh Sagar, Ilesanmi Adesida, Tung-Sheng Kuan, Daniel D. Koleske, C. K. Inoki, Diego J. Dı́az, Randall M. Feenstra, C. D. Lee, Paul W. Bohn   +8 more
openaire   +3 more sources

Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas

Nanophotonics, 2023
The ideal single-photon source displaying high brightness and purity, emission on-demand, mature integration, practical communication wavelength (i.e., in the telecom range), and operating at room temperature does not exist yet.
Meunier Max, Eng John J. H., Mu Zhao, Chenot Sebastien, Brändli Virginie, de Mierry Philippe, Gao Weibo, Zúñiga-Pérez Jesús   +7 more
doaj   +1 more source

Cubic GaN and InGaN/GaN quantum wells

Applied Physics Reviews, 2022
LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead in the cubic phase is a promising alternative because, compared to hexagonal GaN, it benefits from a reduced ...
Binks, DJ, Dawson, P, Oliver, RA, Wallis, DJ   +3 more
openaire   +2 more sources

PU-GAN: A Point Cloud Upsampling Adversarial Network [PDF]

IEEE International Conference on Computer Vision, 2019
Point clouds acquired from range scans are often sparse, noisy, and non-uniform. This paper presents a new point cloud upsampling network called PU-GAN, which is formulated based on a generative adversarial network (GAN), to learn a rich variety of point
Ruihui Li, Xianzhi Li, Chi-Wing Fu, D. Cohen-Or, P. Heng   +4 more
semanticscholar   +1 more source

Application of generative adversarial networks (GAN) for ophthalmology image domains: a survey

Eye and Vision, 2022
Background Recent advances in deep learning techniques have led to improved diagnostic abilities in ophthalmology. A generative adversarial network (GAN), which consists of two competing types of deep neural networks, including a generator and a ...
Aram You, Jin Kuk Kim, I. Ryu, T. Yoo
semanticscholar   +1 more source

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines, 2019
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub   +7 more
doaj   +1 more source

First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN [PDF]

, 2006
First principles phase diagram calculations were performed for the wurtzite-structure quasibinary systems AlN–GaN, GaN–InN, and AlN–InN. Cluster expansion Hamiltonians that excluded, and included, excess vibrational contributions to the free energy, Fvib,
Burton, B. P., Kattner, U., van de Walle, A.   +2 more
core   +1 more source

Structured GANs

2018 IEEE Winter Conference on Applications of Computer Vision (WACV), 2018
We present Generative Adversarial Networks (GANs), in which the symmetric property of the generated images is controlled. This is obtained through the generator network's architecture, while the training procedure and the loss remain the same. The symmetric GANs are applied to face image synthesis in order to generate novel faces with a varying amount ...
Peleg, Irad, Wolf, Lior
openaire   +2 more sources

Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates [PDF]

, 2005
When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN ...
Dawson, M.D., Edwards, P.R., Gu, E., Liu, C., Martin, R.W., Watson, I.M.   +5 more
core   +1 more source

Correlation between crystal structure and magnetism in PLD grown epitaxial films of ε-Fe2O3 on GaN

Science and Technology of Advanced Materials, 2021
In the present paper we discuss correlations between crystal structure and magnetic properties of epitaxial ε-Fe2O3 films grown on GaN. The large magnetocrystalline anisotropy and room temperature multiferroic properties of this exotic iron oxide ...
Sergey M. Suturin, Alexander M. Korovin, Alla A. Sitnikova, Demid A. Kirilenko, Mikhail P. Volkov, Polina A. Dvortsova, Victor A. Ukleev, Masao Tabuchi, Nikolai S. Sokolov   +8 more
doaj   +1 more source