Results 41 to 50 of about 1,260,916 (317)
Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy
Конденсированные среды и межфазные границы, 2023 In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film.
Pavel V. Seredin +13 more
doaj +1 more source
Detecting and Simulating Artifacts in GAN Fake Images [PDF]
International Workshop on Information Forensics and Security, 2019 To detect GAN generated images, conventional supervised machine learning algorithms require collecting a large number of real images as well as fake images generated by the targeted GAN model.
Xu Zhang, Svebor Karaman, Shih-Fu Chang
semanticscholar +1 more source
GAN Compression: Efficient Architectures for Interactive Conditional GANs [PDF]
IEEE Transactions on Pattern Analysis and Machine Intelligence, 2020 Conditional Generative Adversarial Networks (cGANs) have enabled controllable image synthesis for many vision and graphics applications. However, recent cGANs are 1-2 orders of magnitude more compute-intensive than modern recognition CNNs. For example, GauGAN consumes 281G MACs per image, compared to 0.44G MACs for MobileNet-v3, making it difficult for
Muyang Li +5 more
openaire +6 more sources
Revista Elektrón, 2023 The goal of this work is to study a preprocessing method for the data measured by a two-dimensional optoacoustic tomograph in order to reduce or eliminate artifacts introduced by the low number of detectors in the experimental setup and their limited ...
Delfina Montilla +2 more
doaj +1 more source
Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques [PDF]
, 2019 The polarization fields and electro-optical response of PIN-diodes based on nearly lattice-matched InGaN/GaN and InAlN/GaN double heterostructure quantum wells grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy were experimentally ...
Papadimitriou, Dimitra N.
core +1 more source
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies [PDF]
, 2012 This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes ...
Albert, Steven +7 more
core +3 more sources
Journal of Applied Physics, 2021 GaN technology is not only gaining traction in power and RF electronics but is rapidly expanding into other application areas including digital and quantum computing electronics.
Koon Hoo Teo +9 more
semanticscholar +1 more source
Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy [PDF]
, 1999 We have studied molecular beam epitaxy grown GaN films of both polarities using electric force microscopy to detect sub 1 µm regions of charge density variations associated with GaN extended defects.
Bandić, Z. Z. +3 more
core +1 more source
Synthetic data augmentation using GAN for improved liver lesion classification [PDF]
IEEE International Symposium on Biomedical Imaging, 2018 In this paper, we present a data augmentation method that generates synthetic medical images using Generative Adversarial Networks (GANs). We propose a training scheme that first uses classical data augmentation to enlarge the training set and then ...
Maayan Frid-Adar +4 more
semanticscholar +1 more source
Applied Sciences, 2019 A much simplified method for transferring Gallium nitride (GaN) light emitting didoes (LEDs) to an unusual substrate, such as glass, Si, polyethylene terephthalate, or polyurethane, was demonstrated with spontaneously formed vertical tethers during ...
Ja-Yeon Kim +4 more
doaj +1 more source