Results 51 to 60 of about 1,047,492 (261)
Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2023 A local thermal management solution for high electron mobility transistors based on GaN was developed using a BN layer as a heat-spreading element. The thermally conducting and electrically insulating nature of BN allows it to be placed close to the ...
V. S. Volcheck, V. R. Stempitsky
doaj +1 more source
Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]
, 2013 Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Christiansen, S. +4 more
core
Universum GANs: Improving GANs through contradictions
, 2021 Limited availability of labeled-data makes any supervised learning problem challenging. Alternative learning settings like semi-supervised and universum learning alleviate the dependency on labeled data, but still require a large amount of unlabeled data, which may be unavailable or expensive to acquire.
Dhar, Sauptik +4 more
openaire +2 more sources
Advanced Functional Materials, EarlyView.A combinatorial library of dual‐functional antiviral oligomers incorporating N‐halamine and quaternary ammonium functionalities is developed for long‐lasting antiviral activity. The lead materials exhibit rapid and durable antiviral activity against SARS‐CoV‐2 variants and influenza H1N1, with 4 to 5 log reduction in viral copies at 5 mg mL−1 ...
Eid Nassar‐Marjiya +14 more
wiley +1 more source
Micromachines, 2020 In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu +2 more
doaj +1 more source
Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride
, 2011 We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance ...
Bajaj, Sanyam +5 more
core +1 more source
Advanced Functional Materials, EarlyView.This research presents a novel implantable bio‐battery, GF‐OsG, tailored for diabetic bone repair. GF‐OsG generates microcurrents in high‐glucose conditions to enhance vascularization, shift macrophages to the M2 phenotype, and regulate immune responses.
Nanning Lv +10 more
wiley +1 more source
Adaptive Contrast Enhancement for Digital Radiographic Images using Image-to-Image Translation
Current Directions in Biomedical EngineeringDigital radiography in medicine is a widely used imaging method for obtaining visual information about the inside of a body. To prepare the acquired raw image for diagnostic evaluation, the contrast must be adjusted depending on the examined part of the ...
Popp Ann-Kathrin +2 more
doaj +1 more source
AE-CGAN Model based High Performance Network Intrusion Detection System
Applied Sciences, 2019 In this paper, a high-performance network intrusion detection system based on deep learning is proposed for situations in which there are significant imbalances between normal and abnormal traffic.
JooHwa Lee, KeeHyun Park
doaj +1 more source
, 2019 We present RL-GAN-Net, where a reinforcement learning (RL) agent provides fast and robust control of a generative adversarial network (GAN). Our framework is applied to point cloud shape completion that converts noisy, partial point cloud data into a ...
Kim, Young Min +2 more
core +1 more source