Results 51 to 60 of about 1,158,498 (310)
Heat and Fluid Flow in Solvothermal Autoclave for Single-Crystal Growth Process
We report and discuss an experiment and numerical simulation of heat transfer by natural convection inside an autoclave for the solvothermal growth of bulk crystalline GaN.
Yoshio MASUDA +3 more
doaj +1 more source
Communication et études de l’IA : mémoire du futur
Pour aborder la question de la mémoire du futur, ce texte se centre sur un récit de vie que nous avons recueilli auprès de Grégory Chatonsky, artiste dont la production est fortement imprégnée par les outils d’intelligence artificielle. Parmi ces outils,
Franck Renucci +2 more
doaj +1 more source
Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]
Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Christiansen, S. +4 more
core
Nucleation and Growth of GaN/AlN Quantum Dots
We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage.
B. Daudin +7 more
core +1 more source
Associations of Sleep and Shift Work with Osteoarthritis Risk
Objective Daily rhythms may be critical for maintaining homeostasis of joint tissues. We aimed to investigate the relationships between circadian clock disruption, sleep, and osteoarthritis (OA) risk in humans. Methods In the UK Biobank, a prospective 500,000‐person cohort, we evaluated associations between sleep duration, sleeplessness/insomnia, and ...
Elizabeth L. Yanik +5 more
wiley +1 more source
Universum GANs: Improving GANs through contradictions
Limited availability of labeled-data makes any supervised learning problem challenging. Alternative learning settings like semi-supervised and universum learning alleviate the dependency on labeled data, but still require a large amount of unlabeled data, which may be unavailable or expensive to acquire.
Dhar, Sauptik +4 more
openaire +2 more sources
Integrated design of GaN-on-Si power devices and drivers
An all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and
Yan Zhangzhe, Zhou Jianjun, Kong Yuechan
doaj +1 more source
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm
Tian-Li Wu +2 more
doaj +1 more source
A local thermal management solution for high electron mobility transistors based on GaN was developed using a BN layer as a heat-spreading element. The thermally conducting and electrically insulating nature of BN allows it to be placed close to the ...
V. S. Volcheck, V. R. Stempitsky
doaj +1 more source
An idea of designing novel sensors is proposed by creating appropriate Schottky barriers and vacancies between isomorphous Core‐CuOii/ Shell‐CuOi secondary microspheres and enhancing catalytic and spill‐over effects, and electronegativity via spontaneous biphasic separation, self‐assembly, and trace‐Ni‐doping.
Bala Ismail Adamu +8 more
wiley +1 more source

