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Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, 1999
N.-Q. Zhang +5 more
openaire +1 more source

Thermal management of GaN HEMT devices using subcooled flow boiling in an embedded manifold microchannel heat sink

Applied Thermal Engineering, 2023
Weiyu Tang, Junye Li
exaly

Electroluminescence in AlGaN/GaN HEMTs

2002
EL distribution was measured by combining an objective lens (*100) and a CCD camera. After EL signal image was obtained in the dark, top-view image of the device was also taken under illumination. We could precisely study the EL distribution on the device by superimposing these two images.
openaire +1 more source

Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT

Applied Surface Science, 2023
Wanglong Wu, Chuankai Liu, Lixiang Han
exaly

Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Sensors and Actuators B: Chemical, 2020
hongwei liang, Heqiu Zhang, Xiaochuan Xia +2 more
exaly

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

IEEE Electron Device Letters, 2023
Yanlin Wu, Maojun Wang, Muqin Nuo
exaly

Commercialization of 600V GaN HEMTs