Results 191 to 200 of about 7,995 (228)

Investigation of Anomaly in GaN HEMTs

Journal of The Electrochemical Society, 2008
Electron trapping after on-state stress and hole trapping after off-state breakdown stress have been observed by comparing the electroluminescence (EL) images and electrical characteristics in GaN high electron mobility transistors (HEMTs). Temperature measurement and two-dimensional device simulation have been done to confirm the hole-trapping ...
Hsiang Chen, Phillip Preecha, Zhian Lai, Guann-Pyng Li   +3 more
openaire   +1 more source

GaN HEMTs Design and Modeling for 5G

2023 IEEE International Reliability Physics Symposium (IRPS), 2023
Yueying Liu, John Wood, Zongyang Hu, Satyaki Ganguly, Jeremy Fisher, Mike Watts, Scott T. Sheppard, Donald A. Gajewski, Basim Noori   +8 more
openaire   +1 more source

High frequency GaN HEMT Modeling with ASM-HEMT

2022 17th European Microwave Integrated Circuits Conference (EuMIC), 2022
R. Sommet, J.A Silva Dos Santos, A. Santos, J.C Nallatamby   +3 more
openaire   +1 more source

Harmonic analysis Of GaN- HEMT

2015
note
openaire   +2 more sources

Lateral GaN HEMT Structures

2018
This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
openaire   +1 more source

Electroluminescence in AlGaN/GaN HEMTs

2002
EL distribution was measured by combining an objective lens (*100) and a CCD camera. After EL signal image was obtained in the dark, top-view image of the device was also taken under illumination. We could precisely study the EL distribution on the device by superimposing these two images.
openaire   +1 more source

Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Sensors and Actuators B: Chemical, 2020
Heqiu Zhang, Aqrab Ul Ahmad, Hongwei Liang   +2 more
exaly  

Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT

Applied Surface Science, 2023
Wanglong Wu, Chuankai Liu, Lixiang Han   +2 more
exaly  

Characteristics and Application of Cascode GaN HEMT

2022
openaire   +1 more source

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies, 2021
Gwen Rolland, Meriem Bouchilaoun, Richard Ares   +2 more
exaly