Results 171 to 180 of about 199,581 (223)
Some of the next articles are maybe not open access.
Traps localization and analysis in GaN HEMTs
Microelectronics Reliability, 2014Abstract A simple experimental technique aimed at the spatial localization of the dominant trap states involved in drain current dispersion in GaN HEMTs will be presented. By analyzing the dependence of current dispersion from the gate voltage base-line ( V Gbl ) used in double pulse I – V measurements it is possible to observe a different trend ...
A. Chini +4 more
openaire +4 more sources
2010
Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska +3 more
openaire +2 more sources
Thermal effects were investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of AlGaN/GaN HEMTs This is implemented by solving simultaneously the acoustic and optical phonon energy balance equations and also takes into account the coupling of the two subsystems The electro-thermal device ...
Dragica Vasileska +3 more
openaire +2 more sources
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems, 2014
The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced.
M Alsharef +6 more
openaire +1 more source
The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced.
M Alsharef +6 more
openaire +1 more source
Stable high power GaN-ON-GaN HEMT
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004., 2004High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an
K. K. CHU, P. C. CHAO, J. A. WINDYKA
openaire +1 more source
2011
A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.
Wayne Johnson, Edwin L. Piner
openaire +1 more source
A review of nitride-based HEMT technology, beginning with substrate considerations and moving to crystal growth, device processing, packaging, and finally to products. The final section introduces important areas anticipated for future GaN HEMT development: InAlN HEMTs, GaN-on-diamond, and heterointegration.
Wayne Johnson, Edwin L. Piner
openaire +1 more source
UNSTRAINED InAlN/GaN HEMT STRUCTURE
International Journal of High Speed Electronics and Systems, 2004InAlN has been investigated as barrier layer material for GaN -HEMT structures, potentially offering higher sheet charge densities [1] and higher breakdown fields [2]. Lattice matched growth of the barrier layer can be achieved with 17 % In content, avoiding piezo polarization.
M. Neuburger +11 more
openaire +1 more source
Reliability of GaN-Based HEMT devices
2008 Conference on Optoelectronic and Microelectronic Materials and Devices, 2008This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally ...
openaire +2 more sources
Survivability of AlGaN/GaN HEMT
2007 IEEE/MTT-S International Microwave Symposium, 2007Using harmonic balance simulations, we have examined the survivability limiting mechanisms of a 0.2 mum T-gate AlGaN/GaN HEMT device under RF overdrive. Simulations are performed using a 4-finger 200 mum AlGaN/GaN HEMT device model. Two catastrophic failure mechanisms are identified. At low quiescent drain-source voltages (
Yaochung Chen +8 more
openaire +1 more source
Thermoelectromechanical simulation of GaN HEMTs
2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011As a tool for studying the critical issue of reliability in GaN HEMTs we develop a multi-dimensional device simulator based on a continuum formulation in which the electrical, mechanical, thermal and transport variables are fully coupled. The new simulator is illustrated with various examples involving HEMT operstion and failure.
M.G. Ancona, S.C. Binari
openaire +1 more source