High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT. [PDF]
Dai JJ +8 more
europepmc +1 more source
The effect of baseband impedance termination on the linearity of GaN HEMTs [PDF]
Akmal, M +10 more
core +1 more source
Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]
Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc +1 more source
A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices. [PDF]
Fan C +8 more
europepmc +1 more source
A Novel ANN-PSO Method for Optimizing a Small-Signal Equivalent Model of a Dual-Field-Plate GaN HEMT. [PDF]
Shen H +6 more
europepmc +1 more source
Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions. [PDF]
Zhang X +11 more
europepmc +1 more source
Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage. [PDF]
Peng Z, Liu H, Yu H, Li L, Chang KC.
europepmc +1 more source
GaN HEMT study at cryotemperatures
V.V. Krasnov +3 more
openaire +1 more source
Pulsed operation and performance of commercial GaN HEMTs [PDF]
Beach, MA, Fornetti, F, Morris, KA
core
Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model. [PDF]
Li R, Ge C, Liang C, Zhong S.
europepmc +1 more source

