Results 141 to 150 of about 199,581 (223)

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. [PDF]

Micromachines (Basel), 2022
Wang H, Yuan C, Xin Y, Shi Y, Zhong Y, Huang Y, Lu G.   +6 more
europepmc   +1 more source

Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée

, 2018
National audienceUn nouveau concept d'interrupteur de puissance HEMT en GaN présentant la fonctionnalité « normally-off » est expérimentalement validé. L'introduction d'une couche P-GaN suffisamment dopée (autour de 2 x 10 18 cm-3) au sein de la couche ...
Chapelle, Audrey, Frayssinet, Éric, Cordier, Yvon, Morancho, Frédéric, Benmosfeta, Leïla, Trémouilles, David, Austin, Patrick, Hachem, Dany, Spiegel, Yohann, Isoird, Karine, Tasselli, Josiane, Haloui, Chaymaa   +11 more
core  

Fault interruption scheme for HVDC systems using GaN-HEMT and VCB. [PDF]

J Power Electron
Raza A, Babar MZ, Shahid MU, Gulzar H, Gulzar Z, Rahman SU.   +5 more
europepmc   +1 more source

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT. [PDF]

Micromachines (Basel), 2022
Qin Y, Chai C, Li F, Liang Q, Wu H, Yang Y.   +5 more
europepmc   +1 more source

Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications. [PDF]

Micromachines (Basel)
Alim MA, Gaquiere C.
europepmc   +1 more source

Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Sheu G, Song YL, Mogarala R, Susmitha D, Issac K.   +4 more
europepmc   +1 more source

Novel Bidirectional ESD Circuit for GaN HEMT. [PDF]

Micromachines (Basel)
Zhang P, Yang C, Shen J, Luo X, Deng G, Sun S, Wei Y, Wei J.   +7 more
europepmc   +1 more source

GaN-HEMT Based Very-High-Frequency AC Power Supply for Electrosurgery. [PDF]

Conf Proc (IEEE Appl Power Electron Conf Expo), 2021
Bao C, Mazumder SK.
europepmc   +1 more source

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate. [PDF]

Micromachines (Basel), 2022
Wang HC, Liu CH, Huang CR, Chiu HC, Kao HL, Liu X.   +5 more
europepmc   +1 more source

AuNis modified AlGaN/GaN HEMT biosensor for reliable detection of small Rho GTPases in Jurkat T cell lysate. [PDF]

Sci Rep
Fauzi N, Chong CF, Firdaus A, Kawarada H, Mokhtar AMA, Falina S, Syamsul M.   +6 more
europepmc   +1 more source