Results 141 to 150 of about 7,995 (228)

Gate Uzunluğunun Gan Hemt Aygıtlarda Güç Performansına Etkisi

, 2014
This work has combined epitaxial growth, fabrication and characterization efforts to develop a GaN based high electron mobility transistors (HEMT).
Toprak, Ahmet
core  

Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT. [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N.
europepmc   +1 more source

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. [PDF]

Micromachines (Basel), 2022
Wang H, Yuan C, Xin Y, Shi Y, Zhong Y, Huang Y, Lu G.   +6 more
europepmc   +1 more source

Fault interruption scheme for HVDC systems using GaN-HEMT and VCB. [PDF]

J Power Electron
Raza A, Babar MZ, Shahid MU, Gulzar H, Gulzar Z, Rahman SU.   +5 more
europepmc   +1 more source

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT. [PDF]

Micromachines (Basel), 2022
Qin Y, Chai C, Li F, Liang Q, Wu H, Yang Y.   +5 more
europepmc   +1 more source

AlGaN/GaN HEMT电流崩塌效应研究进展

, 2005
简要回顾了AlGaN/GaN HEMT器件电流崩塌效应研究的进展,着重阐述了虚栅模型、应力模型等几种解释电流崩塌效应形成机理的模型和器件钝化 ...
王翠梅, 王军喜, 王晓亮
core  

Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications. [PDF]

Micromachines (Basel)
Alim MA, Gaquiere C.
europepmc   +1 more source

Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation. [PDF]

Micromachines (Basel), 2022
Sheu G, Song YL, Mogarala R, Susmitha D, Issac K.   +4 more
europepmc   +1 more source

GaN-HEMT Based Very-High-Frequency AC Power Supply for Electrosurgery. [PDF]

Conf Proc (IEEE Appl Power Electron Conf Expo), 2021
Bao C, Mazumder SK.
europepmc   +1 more source

Novel Bidirectional ESD Circuit for GaN HEMT. [PDF]

Micromachines (Basel)
Zhang P, Yang C, Shen J, Luo X, Deng G, Sun S, Wei Y, Wei J.   +7 more
europepmc   +1 more source