Results 161 to 170 of about 199,581 (223)
Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model. [PDF]
Micromachines (Basel)Li R, Ge C, Liang C, Zhong S.
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A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks. [PDF]
Micromachines (Basel)Chen L +6 more
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2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
Microelectronic Engineering, 2021 International audienceFor the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial.
Md Abdul Kaium Khan +2 more
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Diamond overgrown InAlN/GaN HEMT
Diamond and Related Materials, 2011 In this work the technology and characterization of nanocrystalline diamond (NCD) films directly grown on InAlN/GaN HEMTs is presented. Optimization of GaN based HEMT process steps including metallization stacks is discussed.
Michele Dipalo +2 more
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Microelectronics Reliability, 2009
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
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Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT
2012 15th International Workshop on Computational Electronics, 2012Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism.
Balaji Padmanabhan +2 more
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GaN HEMT for Space Applications
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions.
Tomio Satoh, Ken Osawa, Atsushi Nitta
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ASM-HEMT: Compact model for GaN HEMTs
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by the Compact Model Coalition (CMC). The presented physical model is surface potential based and is computationally efficient by virtue of being completely ...
Avirup Dasgupta +3 more
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