Results 161 to 170 of about 7,995 (228)

A Novel ANN-PSO Method for Optimizing a Small-Signal Equivalent Model of a Dual-Field-Plate GaN HEMT. [PDF]

Micromachines (Basel)
Shen H, Zhou W, Wang J, Jin H, Wu Y, Wang J, Liu J.   +6 more
europepmc   +1 more source

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions. [PDF]

Micromachines (Basel)
Zhang X, Cao Y, Chen C, Wu L, Wang Z, Su S, Zhang W, Lv L, Zheng X, Tian W, Ma X, Hao Y.   +11 more
europepmc   +1 more source

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage. [PDF]

RSC Adv
Peng Z, Liu H, Yu H, Li L, Chang KC.
europepmc   +1 more source

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model. [PDF]

Micromachines (Basel)
Li R, Ge C, Liang C, Zhong S.
europepmc   +1 more source

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al₂O₃ Gate Stacks. [PDF]

Micromachines (Basel)
Chen L, Lu Z, Fu C, Bi Z, Que M, Sun J, Sun Y.   +6 more
europepmc   +1 more source

Oki sampling GaN HEMT

III-Vs Review, 2005
openaire   +1 more source

Cree sampling GaN HEMTs

III-Vs Review, 2006
openaire   +1 more source

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic Engineering, 2021
International audienceFor the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial.
Md Abdul Kaium Khan, Mohammad Abdul Alim, C Gaquiere   +2 more
exaly   +2 more sources

Diamond overgrown InAlN/GaN HEMT

Diamond and Related Materials, 2011
In this work the technology and characterization of nanocrystalline diamond (NCD) films directly grown on InAlN/GaN HEMTs is presented. Optimization of GaN based HEMT process steps including metallization stacks is discussed.
Michele Dipalo, S Delage, J -F Carlin
exaly   +2 more sources

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GaN HEMT reliability

Microelectronics Reliability, 2009
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge.
Jesús A. del Alamo, Jungwoo Joh
openaire   +1 more source