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Nonlinear characterization of GaN HEMT
Journal of Semiconductors, 2010DC I—V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced ...
Chi Chen +5 more
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Noise in GaN HEMTs and circuits
2017 International Conference on Noise and Fluctuations (ICNF), 2017GaN HEMTs are known to outperform GaAs technologies in power applications, while their noise performance drew much less attention. Only recently, results were published for GaN that are competitive in terms of low-noise performance. This paper discusses the optimization of GaN HEMT technology concerning low-noise performance empirically, based on own ...
Matthias Rudolph +4 more
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AlGaN/GaN microwave power HEMT's
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 2003High average microwave power output density has been observed with AlGaN/GaN HEMT's grown on sapphire substrates, reaching 4.0 W/mm with 49% power-added efficiency for single gates, and 1.8 W/mm with 78% power-added efficiency for multiple gates. Using SiC substrates, an order of magnitude more heat can be removed.
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Survivability of AlGaN/GaN HEMT
2007 IEEE/MTT-S International Microwave Symposium, 2007Using harmonic balance simulations, we have examined the survivability limiting mechanisms of a 0.2 mum T-gate AlGaN/GaN HEMT device under RF overdrive. Simulations are performed using a 4-finger 200 mum AlGaN/GaN HEMT device model. Two catastrophic failure mechanisms are identified. At low quiescent drain-source voltages (
Yaochung Chen +8 more
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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611), 2003
This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and ...
V. Kumar, I. Adesida
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This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and ...
V. Kumar, I. Adesida
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Advancements and trends in GaN HEMT
Applied and Computational Engineering, 2023Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) technology has made significant advancements, revolutionizing the field of power electronics. With their unique properties such as high breakdown voltage, high frequency, and high electron mobility and high-power capabilities, GaN HEMTs offer significant advantages over traditional ...
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MRS Proceedings, 2008
AbstractThis paper is overviewed the recent progress on GaN HEMTs. High power, high frequency and high efficiency performance are reported. In addition, the results about long-term reliabilities and good manufacturability demonstrate that GaN HEMTs are ready for mass production.
Shigeru Nakajima +2 more
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AbstractThis paper is overviewed the recent progress on GaN HEMTs. High power, high frequency and high efficiency performance are reported. In addition, the results about long-term reliabilities and good manufacturability demonstrate that GaN HEMTs are ready for mass production.
Shigeru Nakajima +2 more
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A Feedback GaN HEMT Oscillator
2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018This letter studies a feedback GaN HEMT oscillator implemented with the WIN $0.255{\mu m}$ GaN HEMT technology. The oscillator consists of a HEMT amplifier with an LC feedback network. With the supply voltage of $\text{V}_{\text{DD}} =1.8\ \text{V}$ , the GaN VCO current and power consumption of the oscillator are 10.18 mA and 18.33mW, respectively.
Sheng-Lyang Jang +2 more
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Symmetrical Modeling of GaN HEMTS
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2014This paper presents a symmetrical small signal model for GaN HEMTs valid for both positive and negative Vds. The model takes advantage of the intrinsic symmetry of the devices typically used for switches. The parameters of the model are extracted using a new symmetrical optimization based extraction method, optimizing simultaneously for both positive ...
Ankur Prasad +4 more
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