Results 181 to 190 of about 199,581 (223)
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Investigation on the thermal behavior of microwave GaN HEMTs
Solid-State Electronics, 2011Abstract The investigation of the DC and microwave characteristics versus the ambient temperature is a key issue for active solid-state devices, since the operating temperature can strongly affect not only the transistor performance but also its lifetime to failure.
CRUPI, GIOVANNI +6 more
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AlGaN/GaN microwave power HEMT's
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 2003High average microwave power output density has been observed with AlGaN/GaN HEMT's grown on sapphire substrates, reaching 4.0 W/mm with 49% power-added efficiency for single gates, and 1.8 W/mm with 78% power-added efficiency for multiple gates. Using SiC substrates, an order of magnitude more heat can be removed.
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Nonlinear characterization of GaN HEMT
Journal of Semiconductors, 2010DC I—V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced ...
Chi Chen +5 more
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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611), 2003
This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and ...
V. Kumar, I. Adesida
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This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and ...
V. Kumar, I. Adesida
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Noise in GaN HEMTs and circuits
2017 International Conference on Noise and Fluctuations (ICNF), 2017GaN HEMTs are known to outperform GaAs technologies in power applications, while their noise performance drew much less attention. Only recently, results were published for GaN that are competitive in terms of low-noise performance. This paper discusses the optimization of GaN HEMT technology concerning low-noise performance empirically, based on own ...
Matthias Rudolph +4 more
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GaN HEMTs Design and Modeling for 5G
2023 IEEE International Reliability Physics Symposium (IRPS), 2023Yueying Liu +8 more
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2018
This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally
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High frequency GaN HEMT Modeling with ASM-HEMT
2022 17th European Microwave Integrated Circuits Conference (EuMIC), 2022R. Sommet +3 more
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High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
Energies, 2021Meriem Bouchilaoun +2 more
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