Results 91 to 100 of about 37,714 (225)
Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence
Advanced Science, Volume 13, Issue 9, 13 February 2026.An innovative dual‐spectroscopy approach resolves the debate over GaAsBi's emission temperature sensitivity. By combining temperature‐dependent photoluminescence and transmission spectroscopy, the method decouples the contributions of band‐tail states from the intrinsic band‐edge behavior.
Bing Yan +6 more
wiley +1 more source
Nanoscale Research Letters, 2018 In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate.
D. Benyahia +7 more
doaj +1 more source
Enhancing Stability at High Temperature in GaSb‐Based Phase‐Change Materials via Carbon Introduction
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 2, February 2026.Introducing carbon in GaSb alloys boosts thermal stability of the amorphous phase. Crystallization temperature rises, grains shrink, Sb segregation drops, and compressive strain forms. Amorphous phase stays stable to ∼270°C, with 10 times higher electrical contrast and low‐density change (<4%), making these alloys promising for high‐temperature, high ...
Jacopo Remondina +2 more
wiley +1 more source
Optical Properties of GaSb Nanofibers
Nanoscale Research Letters, 2011 Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after ...
Perez-Bergquist Alejandro +6 more
doaj
Revista de Investigaciones Universidad del Quindío, 2012 En este trabajo se presenta la obtención de una configuración de circuito electrónico basado en GaSb, para una aplicación de filtro sintonizado alrededor de 20 MHz.
Jhon Jairo Prías-Barragán +3 more
doaj +1 more source
Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment
ACS Omega, 2018 GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices.
X. Fang +11 more
semanticscholar +1 more source
Correlated X‐Ray and Electron Microscopies of a Single Biphasic GaAs Nanowire
Small Methods, Volume 10, Issue 3, 9 February 2026.Nano‐focused scanning X‐ray diffraction microscopy at a synchrotron light source, combined with transmission electron microscopy, reveals a clear correlation between the nanoscale distribution of cubic and hexagonal segments in a GaAs nanowire with subtle variations in inter‐reticular spacing, bending, and twisting.
Thomas Dursap +14 more
wiley +1 more source
Nanoscale Research Letters, 2009 We report structural analysis of completely relaxed GaSb epitaxial layers deposited monolithically on GaAs substrates using interfacial misfit (IMF) array growth mode.
Balakrishnan G +7 more
doaj +1 more source
Crystalline GaSb-core optical fibers with room-temperature photoluminescence
, 2018 Glass-clad, GaSb-core fibers were drawn and subsequently laser annealed. The as-drawn fibers were found to be polycrystalline, possess Sb inclusions, and have oxide contamination concentrations of less than 3 at%. Melting and resolidifying regions in the
Seunghan Song +10 more
semanticscholar +1 more source
Intervalley scattering in terahertz quantum cascade lasers with GaSb and InGaSb wells
AIP Advances, 2018 We theoretically study the performance of terahertz quantum cascade lasers (THz-QCLs) with GaSb wells and InxGa1−xSb wells. The results of rate-equation calculations reveal that the intervalley scattering of electrons from the Γ valley to the L valley in
Hiroaki Yasuda
doaj +1 more source