Results 91 to 100 of about 37,307 (275)
En este trabajo se presenta la obtención de una configuración de circuito electrónico basado en GaSb, para una aplicación de filtro sintonizado alrededor de 20 MHz.
Jhon Jairo Prías-Barragán +3 more
doaj +1 more source
Shot Noise Enhancement in Resonant Tunneling Structures in a Magnetic Field
We have observed that the shot noise of tunnel current, I, in GaSb-AlSb-InAs-AlSb-GaSb double-barrier structure under a magnetic field can exceed 2qI. The measurements were done at T=4K in fields up to 5T parallel to the current.
C. W. J. Beenakker +22 more
core +1 more source
Toward a Universal Czochralski Growth Model Leveraging Data‐Driven Techniques
This data‐driven study investigates Czochralski growth using Decision Trees, Symbolic Regression, ANN, and SHAP to assess the impact of 21 process and design parameters on crystal quality. Trained on 632 CFD simulation datasets across four crystalline materials, it demonstrates the feasibility of a universal Cz model applicable to various ...
Natasha Dropka +4 more
wiley +1 more source
Anodal tDCS over the left prefrontal cortex, combined with cognitive training, enhanced cognition, reduced anxiety and depression, and improved motor response in elderly women. These findings support tDCS as a safe, effective strategy for promoting brain plasticity and mental health in aging.
Guilherme Augusto Santos Bueno +5 more
wiley +1 more source
We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices.
A. Hoang +3 more
semanticscholar +1 more source
Optical Properties of GaSb Nanofibers
Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after ...
Perez-Bergquist Alejandro +6 more
doaj
In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate.
D. Benyahia +7 more
doaj +1 more source
Spin relaxation of conduction electrons in bulk III-V semiconductors
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type.
A. G. Aronov +38 more
core +3 more sources
Germanium Laser Power Converters at 1550 nm with Efficiencies Over 30%
Germanium laser power converters convert laser light into electrical power at 1550 nm, offering eye safety and atmospheric transparency. We present improved Ge‐based converters achieving record efficiencies of 30.8% at 6.7 W/cm2. We analyze current limitations and provide a roadmap for efficiencies exceeding 39%, demonstrating the expanding role of ...
Ignacio Rey‐Stolle +3 more
wiley +1 more source
Hidden edge Dirac point and robust quantum edge transport in InAs/GaSb quantum wells [PDF]
The robustness of quantum edge transport in InAs/GaSb quantum wells in the presence of magnetic fields raises an issue on the fate of topological phases of matter under time-reversal symmetry breaking.
Chang-An Li, Song-Bo Zhang, S. Shen
semanticscholar +1 more source

