Results 101 to 110 of about 37,714 (225)
Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase
, 2010 Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent.
Amrit De +3 more
core +1 more source
Solar Energy Materials and Solar Cells, 2018 GaSb based photovoltaic devices have been demonstrated on GaAs substrates by inducing interfacial array of 90° misfit dislocations. Despite the beneficial qualities of the highly stable 90° misfit dislocation, there is a significant density of residual ...
A. Mansoori +7 more
semanticscholar +1 more source
Performance evaluation of a GaSb thermophotovoltaic converter
Revue des Énergies Renouvelables, 2012 In recent years, Gallium Antimonide (GaSb), which has smallest bandgap among III-V semiconductors family, became the subject of extensive investigations in the field of thermophotovoltaic (TPV) converters, because of the recent improvements in ...
F. Bouzid, L. Dehimi
doaj
Simple Rectangular Gratings as a Near-Field “Anti-Reflection” Pattern for GaSb TPV Cells
Scientific Reports, 2017 We show theoretically that 2D rectangular gratings on the surface of GaSb can serve as an “anti-reflection” pattern for nano-gap thermophotovoltaic (TPV) devices, which significantly enhances near-field radiative flux from the emitter to a GaSb cell ...
Haitong Yu +3 more
semanticscholar +1 more source
The effects of electron and proton radiation on GaSb infrared solar cells [PDF]
Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively.
Avery, J. E. +2 more
core +1 more source
The GaSb-CoGa1.3 eutectic composite as a promising material for tensometry
Moldavian Journal of the Physical Sciences, 2013 New small-size tensoresistors based on the GaSb-CoGa1.3 semiconductor eutectic composite have been designed; they exhibit linear, nonhysteresis, and thermostable characteristics, stable parameters, and high reliability and operate in a temperatures range
Rahimov, R. +4 more
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Scientific Reports, 2016 We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices.
A. Hoang +3 more
semanticscholar +1 more source
Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol
AIP Advances, 2016 The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force ...
E. Papis-Polakowska +6 more
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Preepitaxial substrate treatment of GaSb for liquid phase technology homoepitaxial growth [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008 The results of investigation to find out the optimal conditions of preepitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
Andronova О. V., Kurak V. V.
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THE EMPLOYEE MOTIVATION – THE KEY FACTOR IN BUSINESS SUCCESS
International Journal of Innovative Technologies in Economy, 2018 We present you the work: “The Employee Motivation – the Key Factor in Business Success”, where we present the results of the research on this issue conducted by the universities of California and Stanford, based on which the author in cooperation with ...
Dzneladze L. T., Khachidze N. D.
doaj +1 more source