Results 101 to 110 of about 37,307 (275)

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Nanoscale Research Letters, 2009
We report structural analysis of completely relaxed GaSb epitaxial layers deposited monolithically on GaAs substrates using interfacial misfit (IMF) array growth mode.
Balakrishnan G, Rotter TJ, Dawson LR, Nunna K, Liang BL, Huang SH, Jallipalli A, Huffaker DL   +7 more
doaj   +1 more source

Simple Rectangular Gratings as a Near-Field “Anti-Reflection” Pattern for GaSb TPV Cells

Scientific Reports, 2017
We show theoretically that 2D rectangular gratings on the surface of GaSb can serve as an “anti-reflection” pattern for nano-gap thermophotovoltaic (TPV) devices, which significantly enhances near-field radiative flux from the emitter to a GaSb cell ...
Haitong Yu, Dong Liu, Zhen Yang, Yuanyuan Duan   +3 more
semanticscholar   +1 more source

Propagating Coherent Acoustic Phonon Wavepackets in InMnAs/GaSb

, 2005
We observe pronounced oscillations in the differential reflectivity of a ferromagnetic InMnAs/GaSb heterostructure using two-color pump-probe spectroscopy.
A. Oiwa, A. V. Kuznetsov, C. J. Stanton, G. D. Sanders, G.-W. Chern, H. Munekata, J. Kono, J. Wang, T. Slupinski, Y. Hashimoto   +9 more
core   +2 more sources

Intervalley scattering in terahertz quantum cascade lasers with GaSb and InGaSb wells

AIP Advances, 2018
We theoretically study the performance of terahertz quantum cascade lasers (THz-QCLs) with GaSb wells and InxGa1−xSb wells. The results of rate-equation calculations reveal that the intervalley scattering of electrons from the Γ valley to the L valley in
Hiroaki Yasuda
doaj   +1 more source

Electric fields and valence band offsets at strained [111] heterojunctions

, 1997
[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method.
%N. Tit, A. Continenza, A. Continenza, A. Dal Corso, A. J. Freeman, C. G. Van de Walle, C. Ohler, C. Van de Walle, D. L. Smith, H. J. F. Jansen, I. Gorczyca, J. F. Nye, L. Hedin, M. Weinert, P. Hohenberg, P. J. Harshman, R. M. Martin, R. M. Martin, S. Baroni, S. De Gironcoli, S. Froyen, S. Massidda, S. Picozzi, S. Picozzi, S. Picozzi, Su-Huai Wei, Su-Huai Wei, W. A. Harrison, W. Kohn, X. Zhu   +29 more
core   +1 more source

High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD [PDF]

, 2021
He Zhu, Jia-Feng Liu, Hong Zhu, Yunlong Huai, Meng Li, Zhen Liu, Yong Huang   +6 more
openalex   +1 more source

Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy

Journal of Electronic Materials, 2017
Undoped GaSb epilayers, deposited at low growth temperature (440°C), have been grown on GaAs (001) substrate with 2° offcut towards [110], by a molecular beam epitaxy system. Interfacial misfit array (IMF) growth mode has been used in order to impede the
D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski   +6 more
semanticscholar   +1 more source

Performance evaluation of a GaSb thermophotovoltaic converter

Revue des Énergies Renouvelables, 2012
In recent years, Gallium Antimonide (GaSb), which has smallest bandgap among III-V semiconductors family, became the subject of extensive investigations in the field of thermophotovoltaic (TPV) converters, because of the recent improvements in ...
F. Bouzid, L. Dehimi
doaj  

Tuning up the performance of GaAs-based solar cells by inelastic scattering on quantum dots and doping of AlyGa1-ySb type-II dots and AlxGa1-xAs spacers between dots

, 2013
We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAs-based solar cell in which the type-II quantum dot (QDs) absorber is spatially separated from the depletion region.
Afanasev, A., Kechiantz, A.
core   +1 more source

Optimization of surface passivation for suppressing leakage current in GaSb PIN devices [PDF]

, 2020
Yong‐Sok Ji, Khalifa M. Azizur-Rahman, Tae-Ha Chang, Bor-Chau Juang, David Prout, Baolai Liang, D.L. Huffaker, A.F. Chatziioannou   +7 more
openalex   +1 more source