Results 131 to 140 of about 37,307 (275)
Type II GaSb quantum ring solar cells under concentrated sunlight
Che-Pin Tsai +7 more
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Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb
The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes.
Logan Riney +10 more
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The results of the technology and electrical and magnetic properties study of eutectic GaSb-MnSb films are presented. Eutectic GaSb-MnSb films ranging in thickness from 80 to 130 nm have been grown on sapphire substrates by pulsed laser deposition using ...
S. F. Marenkin +5 more
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Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm [PDF]
Alexander Bachmann +2 more
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Local atomic ordering in bulk amorphous (GaSb)1−x Ge2x [PDF]
Andrei Sapelkin +4 more
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Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers
The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
О. V. Andronova, V. V. Kurak
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Growth of Au-seeded GaAs-GaSb nanowires explored in environmental TEM [PDF]
Marnauza Mikelis +4 more
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Characterization of carriers in GaSb∕InAs superlattice grown on conductive GaSb substrate [PDF]
T. V. Chandrasekhar Rao +5 more
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