Results 41 to 50 of about 37,714 (225)

Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems [PDF]

open access: yes, 2018
We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers.
C. Lehner   +6 more
semanticscholar   +1 more source

Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

open access: yes, 2016
We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure.
Dick, Kimberly A.   +5 more
core   +1 more source

Structure of AlSb(001) and GaSb(001) Surfaces Under Extreme Sb-rich Conditions

open access: yes, 2007
We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions.
Erwin, S. C.   +4 more
core   +1 more source

Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection [PDF]

open access: yes, 2018
High operating temperature i nfrared photo detectors with multi -color function that are capable of monolithic integration are of increasing importance in developing the next generation of mid -IR imag e ...
Craig, Adam P.   +5 more
core   +1 more source

Ultrafast Dynamics of Interfacial Electric Fields in Semiconductor Heterostructures Monitored by Pump-Probe Second Harmonic Generation

open access: yes, 2002
We report first measurements of the ultrafast dynamics of interfacial electric fields in semiconductor multilayers using pump-probe second harmonic generation (SHG).
Furdyna, J. K.   +6 more
core   +1 more source

High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared

open access: yesInfrared physics & technology, 2019
We report on the development of InAs/GaSb type-II superlattice infrared photodetectors for operation under temperatures reachable with thermoelectric cooling.
R. Müller   +8 more
semanticscholar   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution

open access: yesMicromachines, 2023
This paper investigates the microscale engineering aspects of n-type doped GaSb to address the challenges associated with achieving high electrical conductivity and precise dopant distribution in this semiconductor material.
Michael J. Hall, Daryoosh Vashaee
doaj   +1 more source

Thermophotovoltaic applications in waste heat recovery systems: example of GaSb cell

open access: yesInternational Journal of Low-Carbon Technologies, 2019
In this study, it is aimed at evaluating real data in high temperature GaSb cell thermophotovoltaic (TPV) systems. The TPV systems are considered as an alternative energy source in terms of efficient use of waste heat, cost and efficiency.
Z. Utlu
semanticscholar   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

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