Results 41 to 50 of about 37,307 (275)

Laser restructuring and photoluminescence of glass-clad GaSb/Si-core optical fibres

Nature Communications, 2019
Semiconductor-core optical fibres have potential applications in photonics and optoelectronics due to large nonlinear optical coefficients and an extended transparency window.
Seunghan Song, Kristin Lønsethagen, F. Laurell, T. Hawkins, J. Ballato, M. Fokine, U. Gibson, U. Gibson   +7 more
semanticscholar   +1 more source

Metallization and Electrical Transport Behaviors of GaSb under High-Pressure

Scientific Reports, 2017
The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and ...
Guozhao Zhang, Baojia Wu, Jia Wang, Haiwa Zhang, Hao Liu, Junkai Zhang, Cailong Liu, Guangrui Gu, Lianhua Tian, Yanzhang Ma, Chunxiao Gao   +10 more
doaj   +1 more source

گزارشگری مالی بخش عمومی، ورای صورت‌های مالی [PDF]

حسابداری و بودجه‌ریزی بخش عمومی, 2020
گزارشگری مالی بعنوان محصول نهایی فرآیند حسابداری، تحت تأثیر ویژگی‌هایی ازجمله محیط فعالیت، نیازهای استفاده‌کنندگان و اهداف ذینفعان از اطلاعات مالی قرار دارد.
شعبان نظری
doaj  

Spontaneous Breathing for Panendoscopy? Retrospective Cohort and Results of a French Practice Survey

OTO Open, 2022
Objective Avoiding tracheal intubation by using general anesthesia with spontaneous breathing (GASB) is attractive for upper airway panendoscopy. The aim of this study was to estimate the incidence of adverse events during panendoscopy under GASB and to ...
Pierre Habrial MD, Maxime Léger MD, Fabienne Costerousse MD, Julie Debiasi MD, Renaud Breheret MD, Charles-Hervé Vacheron MD, Emmanuel Rineau MD, Sigismond Lasocki MD, PhD   +7 more
doaj   +1 more source

Topological energy gaps in the [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires

, 2016
The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the $8\times 8$ Luttinger-Kohn $\vec{k}\cdot\vec{p}$ Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands.
Huang, Guang Yao, Liao, Gaohua, Luo, Ning, Xu, H. Q., Ye, Lin Hui   +4 more
core   +1 more source

Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium [PDF]

, 2000
We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces.
González, E. M., Lin, Y., Mendez, E. E.
core   +3 more sources

Structure of AlSb(001) and GaSb(001) Surfaces Under Extreme Sb-rich Conditions

, 2007
We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions.
Erwin, S. C., Houze, Jeffery, Kim, Seong-Gon, Kim, Sungho, Whitman, L. J.   +4 more
core   +1 more source

Experimental observation of negative differential resistance from an InAs/GaSb interface [PDF]

, 1990
We have observed negative differential resistance at room temperature from devices consisting of a single interface between n-type InAs and p-type GaSb.
Chow, D. H., Collins, D. A., McGill, T. C., Rajakarunanayake, Y., Söderström, J. R., Ting, D. Z.-Y., Yu, E. T.   +6 more
core   +1 more source

Ultrafast Dynamics of Interfacial Electric Fields in Semiconductor Heterostructures Monitored by Pump-Probe Second Harmonic Generation

, 2002
We report first measurements of the ultrafast dynamics of interfacial electric fields in semiconductor multilayers using pump-probe second harmonic generation (SHG).
Furdyna, J. K., Glinka, Yu. D., Liu, X., Perakis, I. E., Sasaki, Y., Shahbazyan, T. V., Tolk, N. H.   +6 more
core   +1 more source

Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

Applied Physics Letters, 2019
We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed
A. Craig, F. Al-Saymari, M. Jain, A. Bainbridge, G. Savich, T. Golding, A. Krier, G. Wicks, A. Marshall   +8 more
semanticscholar   +1 more source