Results 71 to 80 of about 37,307 (275)
Advanced Materials, Volume 38, Issue 3, 13 January 2026.A monolithic multi‐band LED capable of simultaneously emitting short‐ and mid‐wavelength infrared light is demonstrated, enabled by Sb doping–driven strain engineering that achieves balanced strain compensation and coherent epitaxy in the quantum wells.
Hee Joon Jung +12 more
wiley +1 more source
Bandgap Engineering in InAs/GaSb II Superlattices: Modulation and Vacancy Defects Analysis
PhotonicsThe computational analysis of InAs/GaSb type-II superlattices utilizing density functional theory (DFT) with pseudopotentials has been performed. The PBE+U method was employed to correct for the strong correlation effects of the P orbitals of In, As, Ga,
Yan Jiang +6 more
doaj +1 more source
New negative differential resistance device based on resonant interband tunneling [PDF]
, 1989 We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band ...
Chow, D. H. +2 more
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Advanced Materials Technologies, Volume 11, Issue 1, 8 January 2026.Scaling of 3D‐integrated electronics exacerbates thermal bottlenecks, motivating solid‐state on‐chip cooling beyond convection and immersion. This perspective reviews optical refrigeration, electroluminescent cooling, and thermoelectrics for localized, vibration‐free heat removal.
Huilong Liu +2 more
wiley +1 more source
Revista de Administração Pública, 2010 O impairment no setor público tem sido pouco discutido no meio acadêmico. Os órgãos normatizadores têm publicado pronunciamentos sobre o assunto, enquanto muitas dúvidas surgem e permanecem sem resposta.
Luiz Nelson Guedes de Carvalho +2 more
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Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase
, 2010 Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent.
Amrit De +3 more
core +1 more source
Enhanced THz Emission and Exciton Transfer in Monolayer MoS2/GaAs Heterostructures
Advanced Photonics Research, Volume 7, Issue 1, January 2026.This study demonstrates enhanced terahertz (THz) emission from a hybrid structure combining monolayer MoS2 with low‐temperature‐grown GaAs. The mixed‐dimensional van der Waals heterostructure shows a 15% increase in THz output and improved optical conductivity, driven by efficient exciton transfer and nonlinear optical effects, offering a new route for
C. Abinash Bhuyan +4 more
wiley +1 more source
Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices
AIP Advances, 2016 The use of gallium antimonide (GaSb) is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN) devices operating at ultraviolet (UV) wavelengths, that surface textures increase the
Ella Wassweiler, Fatima Toor
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Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
, 2005 We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other.
Pistol, M. -E., Pryor, C. E.
core +1 more source
Advanced Science, Volume 13, Issue 5, 27 January 2026.Li‐ and V‐intercalated V2Se2O bilayers possess intralayer ferrimagnetic and interlayer ferromagnetic orders, alongside ferroelasticity, in‐plane uniaxial magnetic anisotropy, half‐metal/enhanced spin splitting, the anomalous Hall effect, giant magnetoresistance, tunneling magnetoresistance, near‐perfect spin filtering effect, spin Seebeck effect, and ...
Long Zhang +7 more
wiley +1 more source