Results 81 to 90 of about 37,307 (275)

Transverse‐Electric Cherenkov Radiation for TeV‐Scale Particle Detection

open access: yesAdvanced Science, Volume 13, Issue 1, 5 January 2026.
Finite refractive indices of naturally existing materials place a fundamental ceiling on the momentum of detectable particles in traditional Cherenkov detectors. This work demonstrates transverse‐electric graphene plasmon Cherenkov radiation, breaking the momentum barrier for particle detection beyond the TeV scale with exceptional robustness and ...
Zhixiong Xie   +5 more
wiley   +1 more source

Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment

open access: yesACS Omega, 2018
GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices.
X. Fang   +11 more
semanticscholar   +1 more source

Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet

open access: yesScientific Reports, 2021
We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy.
Min Baik   +6 more
doaj   +1 more source

Improved Electron Transport Properties in InSb/Ga0.22In0.78Sb Composite Channel HEMT Structures

open access: yesphysica status solidi (a), Volume 223, Issue 2, January 2026.
The effectiveness of double‐sided Te δ‐doping and engineered buffer structure consisting of GaSb buffer and AlInSb‐graded buffer is investigated in InSb/Ga0.22In0.78 Sb composite channel HEMTs. The degree of threading dislocation suppression is quantitatively analyzed using a pair‐annihilation model.
Tatsuhisa Oba   +10 more
wiley   +1 more source

Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

open access: yesPhysical review B, 2018
We report on temperature-dependent terahertz spectroscopy of a three-layer InAs/GaSb/InAs quantum well (QW) with inverted-band structure. The interband optical transitions, measured up to 16 T at different temperatures by Landau-level magnetospectroscopy,
S. Krishtopenko   +15 more
semanticscholar   +1 more source

Above-Room-Temperature Ferromagnetism in GaSb/Mn Digital Alloys

open access: yes, 2002
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in as-grown samples ...
B. D. McCombe   +13 more
core   +1 more source

Electron Channeling Contrast Imaging for the Characterization of Dislocations in III−V Thin Films on Silicon (001)

open access: yesphysica status solidi (a), Volume 223, Issue 2, January 2026.
Defect characterization plays a crucial role in semiconductor research, yet the development of fast, cheap, and nondestructive tools remains challenging. This work applies electron channeling contrast imaging (ECCI) to III–V thin films on silicon, examining beam parameters and diffraction conditions.
Laura Monge‐Bartolome   +8 more
wiley   +1 more source

Photoluminescence Properties of Type‐II GaSb/GaAs Quantum Rings

open access: yesAdvanced Photonics Research, Volume 6, Issue 12, December 2025.
This study examines the magneto‐optical properties of GaSb/GaAs quantum rings (QRs) using photoluminescence spectroscopy. Recombination dynamics in single‐ and ten‐layer structures are analyzed through activation energy extraction, optical absorption profiling, and observation of a strong excitation‐induced blue shift. Carrier lifetime is also increase
Shumithira Gandan   +10 more
wiley   +1 more source

Crystalline GaSb-core optical fibers with room-temperature photoluminescence

open access: yes, 2018
Glass-clad, GaSb-core fibers were drawn and subsequently laser annealed. The as-drawn fibers were found to be polycrystalline, possess Sb inclusions, and have oxide contamination concentrations of less than 3 at%. Melting and resolidifying regions in the
Seunghan Song   +10 more
semanticscholar   +1 more source

Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer

open access: yesAIP Advances, 2018
An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecular beam epitaxy using a 200 nm strained GaAs1-ySby dislocation filtering buffer.
J.-S. Liu   +6 more
doaj   +1 more source

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