Results 81 to 90 of about 37,714 (225)
Design and TCAD Simulation of p+–n+ InAs‐Based TFET
Nano Select, Volume 7, Issue 3, March 2026.A physics‐based design and optimization of a p+−n+${{p}^ + } - {{n}^ + }$ InAs tunnel field‐effect transistor is presented using calibrated quantum‐corrected TCAD simulations. By employing a composite figure of merit that unifies digital and RF metrics, the proposed homojunction architecture achieves steep subthreshold swing, enhanced cutoff frequency,
Muhammad Elgamal +5 more
wiley +1 more source
AIP Advances, 2018 An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecular beam epitaxy using a 200 nm strained GaAs1-ySby dislocation filtering buffer.
J.-S. Liu +6 more
doaj +1 more source
Scientific Reports, 2021 We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy.
Min Baik +6 more
doaj +1 more source
Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
, 2005 We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other.
Pistol, M. -E., Pryor, C. E.
core +1 more source
Water Resources Research, Volume 62, Issue 3, March 2026.Abstract Although conglomerates composed of clasts and matrix are commonly interbedded with sandstones at geologic CO2 storage sites, their residual trapping behavior remains poorly understood. This study investigates the influence of clast‐induced heterogeneity on residual CO2 trapping during water imbibition, using two natural conglomerate cores from
Hyunjeong Jeon +6 more
wiley +1 more source
Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry [PDF]
, 1994 Scanning tunneling microscopy and spectroscopy is used to characterize InAs/GaSb superlattices, grown by molecular-beam epitaxy. Roughness at the interfaces between InAs and GaSb layers is directly observed in the images, and a quantitative spectrum of ...
Collins, D. A. +4 more
core
Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells
, 2011 We present an experimental study of inverted InAs/GaSb composite quantum wells in the hybridization regime and contacted by superconducting electrodes.
A. F. Andreev +3 more
core +1 more source
Terahertz Volume Plasmon‐Polariton Modulation in All‐Dielectric Hyperbolic Metamaterials
Advanced Optical Materials, Volume 14, Issue 7, 16 February 2026.THz volume plasmon‐polariton (VPP) propagation through plasmon‐based hyperbolic metamaterials, made of alternating layers of doped and undoped III‐V semiconductors. Abstract The development of plasmonics and related applications in the terahertz range faces limitations due to the intrinsic high electron density of the standard metals.
Stefano Campanaro +3 more
wiley +1 more source
P-n junctions formed in gallium antimonide [PDF]
, 1970 Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride ...
Clough, R., Richman, D., Tietjen, J.
core +1 more source
Electric fields and valence band offsets at strained [111] heterojunctions
, 1997 [111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method.
%N. Tit +29 more
core +1 more source