Results 91 to 100 of about 6,152 (186)

High Speed Mid-Wave Infrared Uni-traveling Carrier Photodetector

, 2020
Mid-wave infrared (MWIR) frequency comb is expected to dramatically improve the precision and sensitivity of molecular spectroscopy. For high resolution application, high speed MWIR photodetector is one of the key components, however, the commercially ...
Bowers, John, Chen, Baile, Chen, Yaojiang, Huang, Jian, Xie, Zhiyang   +4 more
core  

Shot Noise Enhancement in Resonant Tunneling Structures in a Magnetic Field

, 1998
We have observed that the shot noise of tunnel current, I, in GaSb-AlSb-InAs-AlSb-GaSb double-barrier structure under a magnetic field can exceed 2qI. The measurements were done at T=4K in fields up to 5T parallel to the current.
C. W. J. Beenakker, E. E. Mendez, E. E. Mendez, E. E. Mendez, E. Pytte, E. R. Brown, G. Iannaccone, G. Iannaccone, H. Birk, H. C. Liu, J. D. Bruno, J. H. Davies, J. H. Davies, J. T. Pham, L. Y. Chen, L. Y. Chen, L. Y. Chen, M. Buttiker, M. M. Jahan, R. Landauer, R. Landauer, V. V. Kuznetsov, Y. P. Li   +22 more
core   +1 more source

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

AIP Advances
The direct growth of III–V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations (TDs), antiphase ...
Kun Cheng, Tianyi Tang, Wenkang Zhan, Zhenyu Sun, Bo Xu, Chao Zhao, Zhanguo Wang   +6 more
doaj   +1 more source

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

AIP Advances, 2016
Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena.
Kan Li, Yingjie Xing, H. Q. Xu
doaj   +1 more source

Observation of fractional quantum Hall effect in an InAs quantum well

, 2017
The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions.
Deng, H., Hossain, Md. Shafayat, Ma, Meng K., Rosales, K. A. Villegas, Shayegan, M., Tschirky, T., Wegscheider, W.   +6 more
core   +1 more source

Vapor Phase Growth Technique and System for Several III-V Compound Semiconductors Interim Scientific Report [PDF]

Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony alloy semiconductor ...
Clough, R., Richman, D., Tietjen, J. J.
core   +4 more sources

Structure of AlSb(001) and GaSb(001) Surfaces Under Extreme Sb-rich Conditions

, 2007
We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions.
Erwin, S. C., Houze, Jeffery, Kim, Seong-Gon, Kim, Sungho, Whitman, L. J.   +4 more
core   +1 more source

Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices

Photonics
We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of
Seung-man Park, Christoph H. Grein
doaj   +1 more source

Perfection of materials technology for producing improved Gunn-effect devices [PDF]

Chemical vapor deposition system for improved Gunn effect devices using arsenic chloride 3 ...
Baxter, R. D., Beer, A. C., Bennett, J. E., Miller, J. F., Moody, J. W.   +4 more
core   +1 more source

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors [PDF]

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction
Abedin, M. Nurul, Bhat, Ishwara, Refaat, Tamer F., Shao, Qing-Hui, Xiao, Ye-Gao   +4 more
core   +1 more source