Results 91 to 100 of about 2,109,434 (243)
Applied Physics ExpressWe examined the epitaxial growth of Ge _1− _x Sn _x thin film with x ∼ 0.50 on GaSb(111) substrate using a low-temperature MBE. X-ray diffraction and Raman scattering spectroscopy analyses revealed that the Ge _1− _x Sn _x thin film with x ∼ 0.50 with no
Shigehisa Shibayama +4 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2017 We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface.
Vinay Kumar Chinni +6 more
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Photoluminescence Properties of Type‐II GaSb/GaAs Quantum Rings
Advanced Photonics Research, Volume 6, Issue 12, December 2025.This study examines the magneto‐optical properties of GaSb/GaAs quantum rings (QRs) using photoluminescence spectroscopy. Recombination dynamics in single‐ and ten‐layer structures are analyzed through activation energy extraction, optical absorption profiling, and observation of a strong excitation‐induced blue shift. Carrier lifetime is also increase
Shumithira Gandan +10 more
wiley +1 more source
Germanium Laser Power Converters at 1550 nm with Efficiencies Over 30%
Solar RRL, Volume 9, Issue 23, December 2025.Germanium laser power converters convert laser light into electrical power at 1550 nm, offering eye safety and atmospheric transparency. We present improved Ge‐based converters achieving record efficiencies of 30.8% at 6.7 W/cm2. We analyze current limitations and provide a roadmap for efficiencies exceeding 39%, demonstrating the expanding role of ...
Ignacio Rey‐Stolle +3 more
wiley +1 more source
A Study of Quantum dots of GaSb
Journal of Mathematical and Fundamental Sciences, 2019 . Quantum Dots is a nano structured materials, which is an interesting object for fundamental study as well as for applications. Quantum Dots has been used for optoelectronic devices, such as fast detectors and for lasers.
M. Barmawi +5 more
doaj
Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure
, 2015 We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages.
Harada, Yuichi +3 more
core +1 more source
Study of Te diffusion into structure GaSb-n/GaSb-p on GaSb-n substrate [PDF]
Acta Crystallographica Section A Foundations of Crystallography, 2005 E. Rosendo +6 more
openaire +1 more source
Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells
, 2010 We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime.
Gerard Sullivan +3 more
core +1 more source
Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers
AIP AdvancesThe direct growth of III–V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations (TDs), antiphase ...
Kun Cheng +6 more
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Generic technique to grow III-V semiconductor nanowires in a closed glass vessel
AIP Advances, 2016 Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena.
Kan Li, Yingjie Xing, H. Q. Xu
doaj +1 more source